2N3055
- Mfr.Part #
- 2N3055
- Manufacturer
- Solid State Inc.
- Package / Case
- TO-204AA, TO-3
- Datasheet
- Download
- Description
- TRANS NPN 60V 15A TO3
- Stock
- 2,445
- In Stock :
- 2,445
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- Manufacturer :
- Solid State Inc.
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Mount :
- Chassis Mount, Through Hole
- Terminal Form :
- PIN/PEG
- Collector Emitter Saturation Voltage :
- 1V
- Polarity/Channel Type :
- NPN
- Voltage - Rated DC :
- 60V
- Collector Base Voltage (VCBO) :
- 100V
- hFE Min :
- 20
- Packaging :
- Tray
- VCEsat-Max :
- 3 V
- Height :
- 8.7mm
- Length :
- 39.5mm
- Vce Saturation (Max) @ Ib, Ic :
- 3V @ 3.3A, 10A
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Max Collector Current :
- 15A
- Transistor Application :
- SWITCHING
- Current - Collector Cutoff (Max) :
- 700µA
- Case Connection :
- COLLECTOR
- Lead Free :
- Lead Free
- Current :
- 15A
- Weight :
- 4.535924g
- Width :
- 26.2mm
- ECCN Code :
- EAR99
- Number of Terminations :
- 2
- RoHS Status :
- ROHS3 Compliant
- Current Rating :
- 15A
- Max Breakdown Voltage :
- 100V
- Power Dissipation :
- 115W
- Gain Bandwidth Product :
- 3MHz
- Package / Case :
- TO-204AA, TO-3
- Emitter Base Voltage (VEBO) :
- 7V
- Pbfree Code :
- yes
- Collector Emitter Breakdown Voltage :
- 60V
- Number of Elements :
- 1
- JESD-609 Code :
- e3
- REACH SVHC :
- No SVHC
- Base Part Number :
- 2N30
- Voltage :
- 60V
- Max Power Dissipation :
- 115W
- Pin Count :
- 2
- Radiation Hardening :
- No
- Element Configuration :
- Single
- Terminal Position :
- BOTTOM
- Transistor Element Material :
- SILICON
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 20 @ 4A 4V
- Mounting Type :
- Chassis Mount
- Terminal Finish :
- Tin (Sn)
- Collector Emitter Voltage (VCEO) :
- 60V
- Operating Temperature :
- 200°C TJ
- Number of Pins :
- 2
- Transistor Type :
- NPN
- Transition Frequency :
- 3MHz
- Datasheets
- 2N3055

NPN 200°C TJ 700μA 1 Elements 2 Terminations SILICON NPN TO-204AA, TO-3 Tray Chassis Mount
2N3055 Description
The 2N3055 is a silicon Epitaxial-Base Planar NPN transistor that is housed in a Jedec TO-3 metal casing. Power switching circuits, series and shunt regulators, output stages, and high fidelity amplifiers are among the applications for the 2N3055 transistor. MJ2955 is the complementary PNP type.
2N3055 Features
-
The excellent safe operating area
-
The low collector-emitter saturation voltage
-
Medium power transistor
-
Pb?free packages are available
-
DC current gain (hFE) up to 70
-
With hfe improved linearity
-
Complementary NPN - PNP transistors
-
The maximum voltage across collector and emitter: 60V DC
-
Maximum current allowed through collector: 15A DC
-
The maximum voltage across base and emitter: 7V DC
-
Maximum current allowed through base: 7A DC
-
The maximum voltage across collector and base: 100V DC
-
Operating temperature range: -65oC to +200oC
-
Total power dissipation: 115W
2N3055 Applications
-
PWM applications
-
Regulator circuits
-
Power switching circuits
-
Amplifier circuits
-
Switch-mode power supply
-
Signal Amplifiers
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