2N3055

Manufacturer :

Solid State Inc.

Product Category :

Transistors - Bipolar (BJT) - Single

Transistor Element Material :

SILICON

JESD-609 Code :

e3

Lead Free :

Lead Free

Base Part Number :

2N30

Current - Collector Cutoff (Max) :

700µA

Polarity/Channel Type :

NPN

Number of Elements :

1

Terminal Finish :

Tin (Sn)

Transistor Application :

SWITCHING

Width :

26.2mm

ECCN Code :

EAR99

Terminal Form :

PIN/PEG

Voltage :

60V

Voltage - Rated DC :

60V

Transistor Type :

NPN

Collector Emitter Breakdown Voltage :

60V

DC Current Gain (hFE) (Min) @ Ic, Vce :

20 @ 4A 4V

Transition Frequency :

3MHz

Length :

39.5mm

REACH SVHC :

No SVHC

Mounting Type :

Chassis Mount

Gain Bandwidth Product :

3MHz

Pin Count :

2

Current :

15A

Collector Base Voltage (VCBO) :

100V

Packaging :

Tray

Power Dissipation :

115W

Radiation Hardening :

No

Vce Saturation (Max) @ Ib, Ic :

3V @ 3.3A, 10A

Max Power Dissipation :

115W

Operating Temperature :

200°C TJ

Package / Case :

TO-204AA, TO-3

Case Connection :

COLLECTOR

Element Configuration :

Single

Collector Emitter Voltage (VCEO) :

60V

RoHS Status :

ROHS3 Compliant

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Pbfree Code :

yes

Terminal Position :

BOTTOM

Max Collector Current :

15A

Number of Pins :

2

Height :

8.7mm

hFE Min :

20

VCEsat-Max :

3 V

Collector Emitter Saturation Voltage :

1V

Number of Terminations :

2

Emitter Base Voltage (VEBO) :

7V

Mount :

Chassis Mount, Through Hole

Current Rating :

15A

Max Breakdown Voltage :

100V

Weight :

4.535924g