2N3055

Manufacturer :

NTE Electronics, Inc.

Product Category :

Transistors - Bipolar (BJT) - Single

Lead Free :

Lead Free

Vce Saturation (Max) @ Ib, Ic :

3V @ 3.3A, 10A

Terminal Form :

PIN/PEG

DC Current Gain (hFE) (Min) @ Ic, Vce :

20 @ 4A 4V

Width :

26.2mm

Current :

15A

REACH SVHC :

No SVHC

Packaging :

Tray

Current Rating :

15A

Base Part Number :

2N30

Max Power Dissipation :

115W

Operating Temperature :

200°C TJ

Max Breakdown Voltage :

100V

Mounting Type :

Chassis Mount

Gain Bandwidth Product :

3MHz

Collector Emitter Voltage (VCEO) :

60V

Transistor Application :

SWITCHING

Collector Emitter Breakdown Voltage :

60V

Number of Terminations :

2

Transistor Type :

NPN

Transition Frequency :

3MHz

RoHS Status :

ROHS3 Compliant

hFE Min :

20

Pbfree Code :

yes

Radiation Hardening :

No

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Voltage :

60V

Max Collector Current :

15A

Weight :

4.535924g

VCEsat-Max :

3 V

Voltage - Rated DC :

60V

Case Connection :

COLLECTOR

JESD-609 Code :

e3

Collector Emitter Saturation Voltage :

1V

Number of Elements :

1

Number of Pins :

2

Emitter Base Voltage (VEBO) :

7V

Transistor Element Material :

SILICON

Terminal Position :

BOTTOM

Pin Count :

2

ECCN Code :

EAR99

Current - Collector Cutoff (Max) :

700µA

Element Configuration :

Single

Length :

39.5mm

Package / Case :

TO-204AA, TO-3

Power Dissipation :

115W

Terminal Finish :

Tin (Sn)

Mount :

Chassis Mount, Through Hole

Polarity/Channel Type :

NPN

Collector Base Voltage (VCBO) :

100V

Height :

8.7mm