2N3055

Manufacturer :

NTE Electronics, Inc.

Product Category :

Transistors - Bipolar (BJT) - Single

Weight :

4.535924g

Vce Saturation (Max) @ Ib, Ic :

3V @ 3.3A, 10A

Gain Bandwidth Product :

3MHz

Current - Collector Cutoff (Max) :

700µA

Base Part Number :

2N30

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Current Rating :

15A

Emitter Base Voltage (VEBO) :

7V

Length :

39.5mm

Radiation Hardening :

No

Operating Temperature :

200°C TJ

Current :

15A

Voltage - Rated DC :

60V

Lead Free :

Lead Free

Pbfree Code :

yes

VCEsat-Max :

3 V

Max Breakdown Voltage :

100V

Polarity/Channel Type :

NPN

Max Power Dissipation :

115W

Width :

26.2mm

Terminal Form :

PIN/PEG

Max Collector Current :

15A

Collector Emitter Breakdown Voltage :

60V

Packaging :

Tray

Number of Elements :

1

Voltage :

60V

Collector Emitter Voltage (VCEO) :

60V

Pin Count :

2

Transistor Application :

SWITCHING

RoHS Status :

ROHS3 Compliant

Number of Terminations :

2

Terminal Position :

BOTTOM

Number of Pins :

2

JESD-609 Code :

e3

hFE Min :

20

Element Configuration :

Single

Transistor Type :

NPN

Mounting Type :

Chassis Mount

Mount :

Chassis Mount, Through Hole

Package / Case :

TO-204AA, TO-3

ECCN Code :

EAR99

Transistor Element Material :

SILICON

Power Dissipation :

115W

Height :

8.7mm

Case Connection :

COLLECTOR

REACH SVHC :

No SVHC

Transition Frequency :

3MHz

Collector Base Voltage (VCBO) :

100V

Terminal Finish :

Tin (Sn)

DC Current Gain (hFE) (Min) @ Ic, Vce :

20 @ 4A 4V

Collector Emitter Saturation Voltage :

1V