2N3055

Manufacturer :

STMicroelectronics

Product Category :

Transistors - Bipolar (BJT) - Single

Published :

2000

ECCN Code :

EAR99

DC Current Gain (hFE) (Min) @ Ic, Vce :

20 @ 4A 4V

Case Connection :

COLLECTOR

Vce Saturation (Max) @ Ib, Ic :

3V @ 3.3A, 10A

Max Junction Temperature (Tj) :

200°C

Base Part Number :

2N3055

Pin Count :

2

Emitter Base Voltage (VEBO) :

7V

Collector Base Voltage (VCBO) :

100V

Surface Mount :

No

Package / Case :

TO-204AA, TO-3

Gain Bandwidth Product :

2.5MHz

Radiation Hardening :

No

hFE Min :

20

Max Collector Current :

15A

Height :

8.51mm

Voltage - Rated DC :

60V

Transistor Element Material :

SILICON

Weight :

4.535924g

JESD-609 Code :

e3

Max Power Dissipation :

115W

Lead Free :

Lead Free

Width :

26.67mm

Number of Pins :

2

Terminal Form :

PIN/PEG

Peak Reflow Temperature (Cel) :

260

Lifecycle Status :

ACTIVE (Last Updated: 5 days ago)

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Number of Terminations :

2

Factory Lead Time :

4 Weeks

Frequency :

2.5MHz

Packaging :

Tray

Mounting Type :

Through Hole

Element Configuration :

Single

Transistor Application :

SWITCHING

REACH SVHC :

No SVHC

Operating Temperature :

-65°C~200°C TJ

Current - Collector Cutoff (Max) :

700µA

Terminal Finish :

Tin (Sn)

Polarity/Channel Type :

NPN

RoHS Status :

ROHS3 Compliant

Collector Emitter Saturation Voltage :

3V

Collector Emitter Breakdown Voltage :

60V

Time@Peak Reflow Temperature-Max (s) :

40

Number of Elements :

1

Collector Emitter Voltage (VCEO) :

60V

Transition Frequency :

2.5MHz

Terminal Position :

BOTTOM

Transistor Type :

NPN

Current Rating :

15A

Pbfree Code :

yes

Length :

39.37mm

Power Dissipation :

115W