2N2945AUB
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- Mfr.Part #
- 2N2945AUB
- Manufacturer
- Microchip Technology
- Package / Case
- 3-SMD, No Lead
- Datasheet
- Download
- Description
- TRANS PNP 20V 0.1A UB
- Stock
- 37,198
- In Stock ：
- 37,198
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- Manufacturer :
- Microchip Technology
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Max Power Dissipation :
- 400mW
- Collector Emitter Voltage (VCEO) :
- 20V
- Packaging :
- Bulk
- Collector Base Voltage (VCBO) :
- 25V
- Number of Elements :
- 1
- Max Collector Current :
- 100mA
- Mount :
- Surface Mount
- ECCN Code :
- EAR99
- Emitter Base Voltage (VEBO) :
- 25V
- Transistor Type :
- PNP
- Mounting Type :
- Surface Mount
- Operating Temperature :
- -65°C~200°C TJ
- Factory Lead Time :
- 22 Weeks
- Published :
- 2007
- Power Dissipation :
- 400mW
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 70 @ 1mA 500mV
- Radiation Hardening :
- No
- Number of Pins :
- 3
- RoHS Status :
- Non-RoHS Compliant
- Current - Collector Cutoff (Max) :
- 10μA ICBO
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Package / Case :
- 3-SMD, No Lead
- Datasheets
- 2N2945AUB
PNP -65°C~200°C TJ 10μA ICBO 1 Elements 3-SMD, No Lead Bulk Surface Mount
2N2945AUB Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 70 @ 1mA 500mV.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 25V.During maximum operation, collector current can be as low as 100mA volts.
2N2945AUB Features
the DC current gain for this device is 70 @ 1mA 500mV
the emitter base voltage is kept at 25V
2N2945AUB Applications
There are a lot of Microsemi Corporation
2N2945AUB applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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