2N2920A

Manufacturer :

Solid State Inc.

Product Category :

Transistors - Bipolar (BJT) - Arrays

Vce Saturation (Max) @ Ib, Ic :

350mV @ 100µA, 1mA

Voltage - Collector Emitter Breakdown (Max) :

60V

Power - Max :

1.5W

Published :

2017

RoHS Status :

Non-RoHS Compliant

Terminal Form :

Wire

HTS Code :

8541.21.00.95

Reach Compliance Code :

not_compliant

JESD-30 Code :

O-MBCY-W6

Packaging :

Bulk

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Transistor Element Material :

SILICON

Frequency - Transition :

60MHz

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Current - Collector Cutoff (Max) :

2nA

Pbfree Code :

No

Operating Temperature :

-65°C~200°C TJ

Package / Case :

TO-78-6 Metal Can

Number of Elements :

2

Qualification Status :

Not Qualified

Transition Frequency :

60MHz

Additional Feature :

LOW NOISE

Surface Mount :

No

Mounting Type :

Through Hole

Transistor Type :

2 NPN (Dual)

Current - Collector (Ic) (Max) :

30mA

DC Current Gain (hFE) (Min) @ Ic, Vce :

300 @ 1mA 5V

Terminal Finish :

Tin/Lead (Sn/Pb)

Power Dissipation-Max (Abs) :

0.3W

Configuration :

SEPARATE, 2 ELEMENTS

Terminal Position :

BOTTOM

Number of Terminations :

6

ECCN Code :

EAR99

JESD-609 Code :

e0

Polarity/Channel Type :

NPN