2N2919

Manufacturer :

Solid State Inc.

Product Category :

Transistors - Bipolar (BJT) - Arrays

Max Power Dissipation :

350mW

HTS Code :

8541.21.00.95

Pbfree Code :

No

Terminal Form :

Wire

Vce Saturation (Max) @ Ib, Ic :

300mV @ 100µA, 1mA

Packaging :

Bulk

Operating Temperature :

200°C TJ

ECCN Code :

EAR99

Transistor Type :

2 NPN (Dual)

Number of Pins :

6

Published :

2007

Mount :

Through Hole

Configuration :

SEPARATE, 2 ELEMENTS

Factory Lead Time :

12 Weeks

Number of Elements :

2

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Current - Collector Cutoff (Max) :

10μA ICBO

Number of Terminations :

6

Current - Collector (Ic) (Max) :

30mA

Max Collector Current :

30mA

DC Current Gain (hFE) (Min) @ Ic, Vce :

150 @ 1mA 5V

Collector Base Voltage (VCBO) :

70V

Terminal Finish :

TIN LEAD

RoHS Status :

Non-RoHS Compliant

Radiation Hardening :

No

Transistor Element Material :

SILICON

Terminal Position :

BOTTOM

Package / Case :

TO-78-6 Metal Can

Mounting Type :

Through Hole

JESD-609 Code :

e0

Polarity/Channel Type :

NPN

Collector Emitter Voltage (VCEO) :

60V

Pin Count :

6