2N2913

Manufacturer :

Central Semiconductor

Product Category :

Transistors - Bipolar (BJT) - Arrays

Operating Temperature (Max) :

175°C

Terminal Position :

BOTTOM

Max Power Dissipation :

600mW

Qualification Status :

Not Qualified

Additional Feature :

LOW NOISE

DC Current Gain (hFE) (Min) @ Ic, Vce :

60 @ 10μA 5V

Number of Elements :

2

Terminal Form :

Wire

RoHS Status :

Non-RoHS Compliant

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Number of Terminations :

6

Transistor Type :

2 NPN (Dual)

Terminal Finish :

Tin/Lead (Sn/Pb)

Published :

2004

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Surface Mount :

No

Element Configuration :

Dual

Mounting Type :

Through Hole

JESD-609 Code :

e0

hFE Min :

60

ECCN Code :

EAR99

JESD-30 Code :

O-MBCY-W6

Transistor Element Material :

SILICON

Current - Collector (Ic) (Max) :

30mA

Collector Emitter Saturation Voltage :

350mV

HTS Code :

8541.21.00.95

Collector Base Voltage (VCBO) :

45V

Max Collector Current :

30mA

Collector Emitter Voltage (VCEO) :

45V

Lead Free :

Lead Free

Transition Frequency :

60MHz

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Reach Compliance Code :

not_compliant

Packaging :

Bulk

Package / Case :

TO-78-6 Metal Can

Polarity :

NPN

Pbfree Code :

No

Gain Bandwidth Product :

60MHz