2N2907AUB
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- Mfr.Part #
- 2N2907AUB
- Manufacturer
- Microchip Technology
- Package / Case
- 3-SMD, No Lead
- Datasheet
- Download
- Description
- TRANS PNP 60V 0.6A UB
- Stock
- 966
- In Stock ：
- 966
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- Manufacturer :
- Microchip Technology
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Current - Collector Cutoff (Max) :
- 50nA
- Vce Saturation (Max) @ Ib, Ic :
- 1.6V @ 50mA, 500mA
- Max Operating Temperature :
- 200°C
- Max Junction Temperature (Tj) :
- 200°C
- Supplier Device Package :
- UB
- Factory Lead Time :
- 8 Weeks
- Published :
- 2005
- Packaging :
- Bulk
- Height :
- 1.42mm
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Transistor Type :
- PNP
- Radiation Hardening :
- No
- Power - Max :
- 500mW
- Max Collector Current :
- 600mA
- Min Operating Temperature :
- -65°C
- Max Power Dissipation :
- 500mW
- Collector Emitter Saturation Voltage :
- 1.6V
- hFE Min :
- 100
- Operating Temperature :
- -65°C~200°C TJ
- Emitter Base Voltage (VEBO) :
- 5V
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 100 @ 150mA 10V
- Current - Collector (Ic) (Max) :
- 600mA
- Collector Base Voltage (VCBO) :
- 60V
- Lead Free :
- Contains Lead
- Polarity :
- PNP
- Power Dissipation :
- 500mW
- Collector Emitter Voltage (VCEO) :
- 60V
- Mounting Type :
- Surface Mount
- Number of Elements :
- 1
- Package / Case :
- 3-SMD, No Lead
- Collector Emitter Breakdown Voltage :
- 60V
- Mount :
- Surface Mount
- RoHS Status :
- Non-RoHS Compliant
- Number of Pins :
- 3
- Voltage - Collector Emitter Breakdown (Max) :
- 60V
- Datasheets
- 2N2907AUB
PNP -65°C~200°C TJ 50nA 1 Elements 3-SMD, No Lead Bulk Surface Mount
2N2907AUB Overview
This device has a DC current gain of 100 @ 150mA 10V, which is the ratio between the collector current and the base current.A collector emitter saturation voltage of 1.6V allows maximum design flexibility.A VCE saturation indicates a maximum value of Ic (saturation), and a maximum value of VCE saturation (Max).The base voltage of the emitter can be kept at 5V to achieve high efficiency.Single BJT transistor comes in a supplier device package of UB.Detection of Collector Emitter Breakdown at 60V maximal voltage is present.The maximum collector current is 600mA volts.
2N2907AUB Features
the DC current gain for this device is 100 @ 150mA 10V
a collector emitter saturation voltage of 1.6V
the vce saturation(Max) is 1.6V @ 50mA, 500mA
the emitter base voltage is kept at 5V
the supplier device package of UB
2N2907AUB Applications
There are a lot of Microsemi Corporation
2N2907AUB applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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