2N2907AUA

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Mfr.Part #
2N2907AUA
Manufacturer
Microchip Technology
Package / Case
4-CLCC
Datasheet
Download
Description
TRANS PNP 60V 0.6A UA
Stock
36,697
In Stock :
36,697

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Manufacturer :
Microchip Technology
Product Category :
Transistors - Bipolar (BJT) - Single
Power Dissipation :
400mW
Factory Lead Time :
15 Weeks
Transistor Type :
PNP
hFE Min :
100
Mount :
Surface Mount
RoHS Status :
Non-RoHS Compliant
Operating Temperature :
-65°C~200°C TJ
Supplier Device Package :
Ceramic SMD
Power - Max :
400mW
Polarity :
PNP
Collector Base Voltage (VCBO) :
60V
Collector Emitter Saturation Voltage :
1.6V
Current - Collector Cutoff (Max) :
50nA
Length :
5.715mm
Max Operating Temperature :
200°C
Current - Collector (Ic) (Max) :
600mA
Package / Case :
4-CLCC
Element Configuration :
Single
Width :
3.937mm
Number of Pins :
4
Number of Elements :
1
Mounting Type :
Surface Mount
Vce Saturation (Max) @ Ib, Ic :
1.6V @ 50mA, 500mA
Published :
1995
Max Power Dissipation :
400mW
DC Current Gain (hFE) (Min) @ Ic, Vce :
100 @ 1mA 10V
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Collector Emitter Voltage (VCEO) :
60V
Height :
1.905mm
Max Collector Current :
600mA
Packaging :
Bulk
Min Operating Temperature :
-65°C
Voltage - Collector Emitter Breakdown (Max) :
60V
Emitter Base Voltage (VEBO) :
5V
Collector Emitter Breakdown Voltage :
60V
Datasheets
2N2907AUA
Introducing Transistors - Bipolar (BJT) - Single Microchip Technology 2N2907AUA from Chip IC,where excellence meets affordability. This product stands out with its Operating Temperature:-65°C~200°C TJ, Package / Case:4-CLCC, Number of Pins:4, Mounting Type:Surface Mount, 2N2907AUA pinout, 2N2907AUA datasheet PDF, 2N2907AUA amp .Beyond Transistors - Bipolar (BJT) - Single Microchip Technology 2N2907AUA ,we also offer BC817-40,235, BC817-40,215, BC807-40,215, Our vast inventory has you covered. Contact us now for immediate solutions.

Microchip Technology 2N2907AUA


PNP -65°C~200°C TJ 50nA 1 Elements 4-CLCC Bulk Surface Mount

2N2907AUA Overview


DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 100 @ 1mA 10V DC current gain.As it features a collector emitter saturation voltage of 1.6V, it allows for maximum design flexibility.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.Keeping the emitter base voltage at 5V can result in a high level of efficiency.There is no device package available from the supplier for this product.Single BJT transistor shows a 60V maximal voltage - Collector EmSingle BJT transistorter Breakdown.When collector current reaches its maximum, it can reach 600mA volts.

2N2907AUA Features


the DC current gain for this device is 100 @ 1mA 10V
a collector emitter saturation voltage of 1.6V
the vce saturation(Max) is 1.6V @ 50mA, 500mA
the emitter base voltage is kept at 5V
the supplier device package of Ceramic SMD


2N2907AUA Applications


There are a lot of TT Electronics/Optek Technology
2N2907AUA applications of single BJT transistors.


  • Inverter
  • Interface
  • Driver
  • Muting
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