2N2907AE4
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- Mfr.Part #
- 2N2907AE4
- Manufacturer
- Microchip Technology
- Package / Case
- TO-206AA, TO-18-3 Metal Can
- Datasheet
- Download
- Description
- TRANS PNP 60V 0.6A TO18
- Stock
- 16,231
- In Stock ：
- 16,231
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- Manufacturer :
- Microchip Technology
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Transistor Type :
- PNP
- Current - Collector (Ic) (Max) :
- 600mA
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 100 @ 150mA 10V
- Max Operating Temperature :
- 200°C
- Mount :
- Through Hole
- Collector Emitter Voltage (VCEO) :
- 60V
- Max Power Dissipation :
- 500mW
- Min Operating Temperature :
- -65°C
- RoHS Status :
- RoHS Compliant
- Package / Case :
- TO-206AA, TO-18-3 Metal Can
- Supplier Device Package :
- TO-18
- Voltage - Collector Emitter Breakdown (Max) :
- 60V
- Max Collector Current :
- 600mA
- Packaging :
- Bulk
- Mounting Type :
- Through Hole
- Current - Collector Cutoff (Max) :
- 10μA ICBO
- Operating Temperature :
- -65°C~200°C TJ
- Number of Pins :
- 3
- Vce Saturation (Max) @ Ib, Ic :
- 1.6V @ 50mA, 500mA
- Power - Max :
- 500mW
- Factory Lead Time :
- 8 Weeks
- Datasheets
- 2N2907AE4
PNP -65°C~200°C TJ 10μA ICBO TO-206AA, TO-18-3 Metal Can Bulk Through Hole
2N2907AE4 Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 100 @ 150mA 10V.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 1.6V @ 50mA, 500mA.TO-18 is the supplier device package for this product.This device displays a 60V maximum voltage - Collector Emitter Breakdown.During maximum operation, collector current can be as low as 600mA volts.
2N2907AE4 Features
the DC current gain for this device is 100 @ 150mA 10V
the vce saturation(Max) is 1.6V @ 50mA, 500mA
the supplier device package of TO-18
2N2907AE4 Applications
There are a lot of Microsemi Corporation
2N2907AE4 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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