2N2906
- Mfr.Part #
- 2N2906
- Manufacturer
- onsemi
- Package / Case
- TO-206AA, TO-18-3 Metal Can
- Datasheet
- Download
- Description
- TRANS PNP 40V 0.6A TO18
- Stock
- 20,920
- In Stock :
- 20,920
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Current - Collector Cutoff (Max) :
- 20nA (ICBO)
- Power Dissipation-Max (Abs) :
- 0.4W
- RoHS Status :
- Non-RoHS Compliant
- ECCN Code :
- EAR99
- Reach Compliance Code :
- not_compliant
- Terminal Position :
- BOTTOM
- Collector-Emitter Voltage-Max :
- 40V
- Power - Max :
- 1.8W
- Mounting Type :
- Through Hole
- Number of Elements :
- 1
- Transistor Element Material :
- SILICON
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Turn On Time-Max (ton) :
- 45ns
- Transition Frequency :
- 200MHz
- JESD-30 Code :
- O-MBCY-W3
- Number of Terminals :
- 3
- Current - Collector (Ic) (Max) :
- 600mA
- DC Current Gain-Min (hFE) :
- 20
- Polarity/Channel Type :
- PNP
- Collector Current-Max (IC) :
- 0.6A
- Transistor Type :
- PNP
- Operating Temperature :
- -65°C ~ 200°C (TJ)
- Vce Saturation (Max) @ Ib, Ic :
- 1.6V @ 50mA, 500mA
- Turn Off Time-Max (toff) :
- 100ns
- HTS Code :
- 8541.21.00.75
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 40 @ 150mA, 10V
- Frequency - Transition :
- 200MHz
- Qualification Status :
- Not Qualified
- Pbfree Code :
- icon-pbfree no
- Voltage - Collector Emitter Breakdown (Max) :
- 40V
- JESD-609 Code :
- e0
- Operating Temperature (Max) :
- 200°C
- Terminal Finish :
- Tin/Lead (Sn/Pb)
- Packaging :
- Bulk
- Transistor Application :
- SWITCHING
- Surface Mount :
- No
- Terminal Form :
- Wire
- Configuration :
- Single
- JEDEC-95 Code :
- TO-18
- Package / Case :
- TO-206AA, TO-18-3 Metal Can
- Supplier Device Package :
- TO-18
- Series :
- --
- Datasheets
- 2N2906
PNP -65°C ~ 200°C (TJ) 20nA (ICBO) 1 Elements SILICON PNP TO-206AA, TO-18-3 Metal Can Bulk Through Hole
2N2906 Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 40 @ 150mA, 10V.Vce saturation means Ic is at its maximum value(saturated), and the vce saturation(Max) is 1.6V @ 50mA, 500mA.A transition frequency of 200MHz is present in the part.The product comes in the supplier device package of TO-18.There is a setting of 40V for maximal collector-Emitter voltage.A 40V maximal voltage - Collector Emitter Breakdown is present in the device.
2N2906 Features
the DC current gain for this device is 40 @ 150mA, 10V
the vce saturation(Max) is 1.6V @ 50mA, 500mA
a transition frequency of 200MHz
the supplier device package of TO-18
2N2906 Applications
There are a lot of Central Semiconductor
2N2906 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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