2N2779
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- Mfr.Part #
- 2N2779
- Manufacturer
- Microchip Technology
- Package / Case
- TO-211MB, TO-63-4, Stud
- Datasheet
- Download
- Description
- POWER BJT
- Stock
- 17,704
- In Stock ：
- 17,704
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- Manufacturer :
- Microchip Technology
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Subcategory :
- Transistors
- Current - Collector (Ic) (Max) :
- 30 A
- Transistor Polarity :
- NPN
- Brand :
- Microchip Technology
- Frequency - Transition :
- -
- Power - Max :
- 200 W
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- -
- Series :
- -
- Operating Temperature :
- -65°C ~ 200°C (TJ)
- Transistor Type :
- PNP
- Voltage - Collector Emitter Breakdown (Max) :
- 250 V
- Mounting Type :
- Stud Mount
- Manufacturer :
- Microchip
- Technology :
- Si
- Product Status :
- Active
- Product Category :
- Bipolar Transistors - BJT
- Current - Collector Cutoff (Max) :
- -
- Product Type :
- BJTs - Bipolar Transistors
- Package / Case :
- TO-211MB, TO-63-4, Stud
- Vce Saturation (Max) @ Ib, Ic :
- -
- Supplier Device Package :
- TO-63
- Package :
- Bulk
- Datasheets
- 2N2779
PNP -65°C ~ 200°C (TJ) - TO-211MB, TO-63-4, Stud Stud Mount
2N2779 Overview
This device has a DC current gain of -, which is the ratio between the collector current and the base current.A VCE saturation indicates a maximum value of Ic (saturation), and a maximum value of VCE saturation (Max).Single BJT transistor comes in a supplier device package of TO-63.Detection of Collector Emitter Breakdown at 250 V maximal voltage is present.
2N2779 Features
the DC current gain for this device is -
the vce saturation(Max) is -
the supplier device package of TO-63
2N2779 Applications
There are a lot of Microchip Technology
2N2779 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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