2N2369AUB

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Mfr.Part #
2N2369AUB
Manufacturer
Microchip Technology
Package / Case
4-SMD
Datasheet
Download
Description
TRANS NPN 20V SMD
Stock
15,514
In Stock :
15,514

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Manufacturer :
Microchip Technology
Product Category :
Transistors - Bipolar (BJT) - Single
Mounting Type :
Surface Mount
Max Power Dissipation :
360mW
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Collector Emitter Breakdown Voltage :
15V
Collector Emitter Voltage (VCEO) :
15V
Package / Case :
4-SMD
Collector Base Voltage (VCBO) :
40V
Vce Saturation (Max) @ Ib, Ic :
450mV @ 10mA, 100mA
Packaging :
Bulk
Terminal Finish :
TIN LEAD
Transistor Element Material :
SILICON
ECCN Code :
EAR99
Operating Temperature :
-65°C~200°C TJ
Pin Count :
3
Pbfree Code :
No
Number of Terminations :
3
Configuration :
Single
Factory Lead Time :
22 Weeks
Number of Elements :
1
Mount :
Surface Mount
Power Dissipation :
360mW
Emitter Base Voltage (VEBO) :
4.5V
JESD-609 Code :
e0
Published :
2004
Transistor Application :
SWITCHING
Max Collector Current :
400nA
Lifecycle Status :
IN PRODUCTION (Last Updated: 1 month ago)
Transistor Type :
NPN
Number of Pins :
3
Terminal Position :
Dual
RoHS Status :
Non-RoHS Compliant
Polarity/Channel Type :
NPN
DC Current Gain (hFE) (Min) @ Ic, Vce :
20 @ 100mA 1V
Radiation Hardening :
No
Datasheets
2N2369AUB
Introducing Transistors - Bipolar (BJT) - Single Microchip Technology 2N2369AUB from Chip IC,where excellence meets affordability. This product stands out with its Mounting Type:Surface Mount, Package / Case:4-SMD, Operating Temperature:-65°C~200°C TJ, Number of Terminations:3, Number of Pins:3, 2N2369AUB pinout, 2N2369AUB datasheet PDF, 2N2369AUB amp .Beyond Transistors - Bipolar (BJT) - Single Microchip Technology 2N2369AUB ,we also offer BC817-40,235, BC817-40,215, BC807-40,215, Our vast inventory has you covered. Contact us now for immediate solutions.



NPN -65°C~200°C TJ 1 Elements 3 Terminations SILICON NPN 4-SMD Bulk Surface Mount

2N2369AUB Overview


DC current gain in this device equals 20 @ 100mA 1V, which is the ratio of the base current to the collector current.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 450mV @ 10mA, 100mA.An emitter's base voltage can be kept at 4.5V to gain high efficiency.In extreme cases, the collector current can be as low as 400nA volts.

2N2369AUB Features


the DC current gain for this device is 20 @ 100mA 1V
the vce saturation(Max) is 450mV @ 10mA, 100mA
the emitter base voltage is kept at 4.5V


2N2369AUB Applications


There are a lot of Microsemi Corporation
2N2369AUB applications of single BJT transistors.


  • Inverter
  • Interface
  • Driver
  • Muting
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