2N2369AUA

Manufacturer :

Microchip Technology

Product Category :

Transistors - Bipolar (BJT) - Single

Power - Max :

360mW

Package / Case :

4-SMD

Operating Temperature :

-65°C~200°C TJ

Number of Elements :

1

Turn Off Time-Max (toff) :

18ns

Polarity/Channel Type :

NPN

Turn On Time-Max (ton) :

12ns

Transistor Application :

SWITCHING

Radiation Hardening :

No

Collector Emitter Breakdown Voltage :

15V

Transistor Element Material :

SILICON

Max Power Dissipation :

360mW

Published :

2004

Number of Terminations :

4

RoHS Status :

Non-RoHS Compliant

Vce Saturation (Max) @ Ib, Ic :

450mV @ 10mA, 100mA

Transistor Type :

NPN

Collector Base Voltage (VCBO) :

40V

Terminal Position :

Dual

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Max Collector Current :

400nA

Number of Pins :

4

Factory Lead Time :

22 Weeks

Collector Emitter Voltage (VCEO) :

450mV

Mount :

Surface Mount

Mounting Type :

Surface Mount

Packaging :

Bulk

Configuration :

Single

DC Current Gain (hFE) (Min) @ Ic, Vce :

20 @ 100mA 1V

Lifecycle Status :

IN PRODUCTION (Last Updated: 3 weeks ago)