2N2369A
- Mfr.Part #
- 2N2369A
- Manufacturer
- STMicroelectronics
- Package / Case
- TO-206AA, TO-18-3 Metal Can
- Datasheet
- Download
- Description
- TRANS NPN 15V 0.2A TO18
- Stock
- 12,303
- In Stock :
- 12,303
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- Manufacturer :
- STMicroelectronics
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Max Collector Current :
- 400nA
- Packaging :
- Bulk
- Collector Emitter Voltage (VCEO) :
- 15V
- Radiation Hardening :
- No
- Case Connection :
- COLLECTOR
- Number of Terminations :
- 3
- Vce Saturation (Max) @ Ib, Ic :
- 450mV @ 10mA, 100mA
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 20 @ 100mA 1V
- Transition Frequency :
- 500MHz
- VCEsat-Max :
- 0.45 V
- Terminal Position :
- BOTTOM
- Collector Emitter Breakdown Voltage :
- 15V
- Lifecycle Status :
- IN PRODUCTION (Last Updated: 1 month ago)
- Pin Count :
- 3
- Collector-Base Capacitance-Max :
- 4pF
- ECCN Code :
- EAR99
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Number of Pins :
- 3
- Lead Free :
- Contains Lead
- Contact Plating :
- Lead, Tin
- Collector Base Voltage (VCBO) :
- 40V
- Polarity/Channel Type :
- NPN
- Transistor Element Material :
- SILICON
- Factory Lead Time :
- 12 Weeks
- JESD-609 Code :
- e0
- Package / Case :
- TO-206AA, TO-18-3 Metal Can
- Max Power Dissipation :
- 360mW
- Published :
- 2002
- Number of Elements :
- 1
- Transistor Application :
- SWITCHING
- Terminal Form :
- Wire
- Power Dissipation :
- 360mW
- Mount :
- Through Hole
- Operating Temperature :
- -65°C~200°C TJ
- Configuration :
- Single
- Emitter Base Voltage (VEBO) :
- 4.5V
- RoHS Status :
- Non-RoHS Compliant
- Pbfree Code :
- No
- Mounting Type :
- Through Hole
- Terminal Finish :
- TIN LEAD
- Transistor Type :
- NPN
- Datasheets
- 2N2369A

NPN -65°C~200°C TJ 1 Elements 3 Terminations SILICON NPN TO-206AA, TO-18-3 Metal Can Bulk Through Hole
2N2369A Overview
In this device, the DC current gain is 20 @ 100mA 1V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 450mV @ 10mA, 100mA.Keeping the emitter base voltage at 4.5V allows for a high level of efficiency.500MHz is present in the transition frequency.Maximum collector currents can be below 400nA volts.
2N2369A Features
the DC current gain for this device is 20 @ 100mA 1V
the vce saturation(Max) is 450mV @ 10mA, 100mA
the emitter base voltage is kept at 4.5V
a transition frequency of 500MHz
2N2369A Applications
There are a lot of Microsemi Corporation
2N2369A applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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