2N2369
- Mfr.Part #
- 2N2369
- Manufacturer
- onsemi
- Package / Case
- TO-206AA, TO-18-3 Metal Can
- Datasheet
- Download
- Description
- TRANS NPN 15V 0.2A TO18
- Stock
- 13,543
- In Stock :
- 13,543
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- ECCN Code :
- EAR99
- Mount :
- Through Hole
- Case Connection :
- COLLECTOR
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 20 @ 100mA 1V
- Transistor Element Material :
- SILICON
- VCEsat-Max :
- 0.45 V
- Collector Emitter Breakdown Voltage :
- 15V
- Factory Lead Time :
- 12 Weeks
- Contact Plating :
- Lead, Tin
- Published :
- 2002
- Package / Case :
- TO-206AA, TO-18-3 Metal Can
- Vce Saturation (Max) @ Ib, Ic :
- 450mV @ 10mA, 100mA
- Lifecycle Status :
- IN PRODUCTION (Last Updated: 1 month ago)
- Number of Pins :
- 3
- Polarity/Channel Type :
- NPN
- Emitter Base Voltage (VEBO) :
- 4.5V
- Transistor Application :
- SWITCHING
- JESD-609 Code :
- e0
- Number of Terminations :
- 3
- Pbfree Code :
- No
- Lead Free :
- Contains Lead
- Max Collector Current :
- 400nA
- Configuration :
- Single
- Terminal Form :
- Wire
- Radiation Hardening :
- No
- Terminal Position :
- BOTTOM
- Transition Frequency :
- 500MHz
- Collector Emitter Voltage (VCEO) :
- 15V
- Max Power Dissipation :
- 360mW
- Operating Temperature :
- -65°C~200°C TJ
- Collector Base Voltage (VCBO) :
- 40V
- Pin Count :
- 3
- Mounting Type :
- Through Hole
- RoHS Status :
- Non-RoHS Compliant
- Transistor Type :
- NPN
- Power Dissipation :
- 360mW
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Terminal Finish :
- TIN LEAD
- Collector-Base Capacitance-Max :
- 4pF
- Number of Elements :
- 1
- Packaging :
- Bulk
- Datasheets
- 2N2369
2N2369 Documents
NPN -65°C~200°C TJ 1 Elements 3 Terminations SILICON NPN TO-206AA, TO-18-3 Metal Can Bulk Through Hole
2N2369A Overview
In this device, the DC current gain is 20 @ 100mA 1V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 450mV @ 10mA, 100mA.Keeping the emitter base voltage at 4.5V allows for a high level of efficiency.500MHz is present in the transition frequency.Maximum collector currents can be below 400nA volts.
2N2369A Features
the DC current gain for this device is 20 @ 100mA 1V
the vce saturation(Max) is 450mV @ 10mA, 100mA
the emitter base voltage is kept at 4.5V
a transition frequency of 500MHz
2N2369A Applications
There are a lot of Microsemi Corporation
2N2369A applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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