2N1131

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Mfr.Part #
2N1131
Manufacturer
Microchip Technology
Package / Case
TO-205AD, TO-39-3 Metal Can
Datasheet
Download
Description
POWER BJT
Stock
14,829
In Stock :
14,829

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Manufacturer :
Microchip Technology
Product Category :
Transistors - Bipolar (BJT) - Single
Reach Compliance Code :
not_compliant
JESD-30 Code :
O-MBCY-W3
Packaging :
Bulk
Series :
--
Number of Elements :
1
Mounting Type :
Through Hole
Vce Saturation (Max) @ Ib, Ic :
1.5V @ 15mA, 150mA
Configuration :
Single
Number of Terminations :
3
Transistor Application :
SWITCHING
ECCN Code :
EAR99
DC Current Gain (hFE) (Min) @ Ic, Vce :
20 @ 150mA, 10V
Terminal Position :
BOTTOM
Operating Temperature :
-65°C ~ 200°C (TJ)
Surface Mount :
No
Transistor Element Material :
SILICON
RoHS Status :
Non-RoHS Compliant
Terminal Form :
Wire
DC Current Gain-Min (hFE) :
20
Current - Collector (Ic) (Max) :
600mA
Package / Case :
TO-205AD, TO-39-3 Metal Can
JEDEC-95 Code :
TO-39
Collector Current-Max (IC) :
0.6A
Factory Lead Time :
6 Weeks
Supplier Device Package :
TO-39
Transition Frequency :
50MHz
HTS Code :
8541.21.00.95
JESD-609 Code :
e0
Frequency - Transition :
50MHz
Terminal Finish :
Tin/Lead (Sn/Pb)
Published :
2017
Collector-Emitter Voltage-Max :
35V
Transistor Type :
PNP
Current - Collector Cutoff (Max) :
100µA (ICBO)
Voltage - Collector Emitter Breakdown (Max) :
50V
Power - Max :
2W
Polarity/Channel Type :
PNP
Datasheets
2N1131
Introducing Transistors - Bipolar (BJT) - Single Microchip Technology 2N1131 from Chip IC,where excellence meets affordability. This product stands out with its Mounting Type:Through Hole, Number of Terminations:3, Operating Temperature:-65°C ~ 200°C (TJ), Package / Case:TO-205AD, TO-39-3 Metal Can, 2N1131 pinout, 2N1131 datasheet PDF, 2N1131 amp .Beyond Transistors - Bipolar (BJT) - Single Microchip Technology 2N1131 ,we also offer BC817-40,235, BC817-40,215, BC807-40,215, Our vast inventory has you covered. Contact us now for immediate solutions.



PNP -65°C ~ 200°C (TJ) 100µA (ICBO) 1 Elements 3 Terminations SILICON PNP TO-205AD, TO-39-3 Metal Can Bulk Through Hole

2N1131 Overview


The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 20 @ 150mA, 10V.Vce saturation means Ic is at its maximum value(saturated), and the vce saturation(Max) is 1.5V @ 15mA, 150mA.A transition frequency of 50MHz is present in the part.The product comes in the supplier device package of TO-39.There is a setting of 35V for maximal collector-Emitter voltage.A 50V maximal voltage - Collector Emitter Breakdown is present in the device.

2N1131 Features


the DC current gain for this device is 20 @ 150mA, 10V
the vce saturation(Max) is 1.5V @ 15mA, 150mA
a transition frequency of 50MHz
the supplier device package of TO-39


2N1131 Applications


There are a lot of Central Semiconductor
2N1131 applications of single BJT transistors.


  • Inverter
  • Interface
  • Driver
  • Muting
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