2DD1766R-13
- Mfr.Part #
- 2DD1766R-13
- Manufacturer
- Diodes Incorporated
- Package / Case
- TO-243AA
- Datasheet
- Download
- Description
- TRANS NPN 32V 2A SOT89-3
- Stock
- 32,831
- In Stock :
- 32,831
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- Manufacturer :
- Diodes Incorporated
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Max Breakdown Voltage :
- 32V
- RoHS Status :
- ROHS3 Compliant
- Base Part Number :
- 2DD1766
- Terminal Position :
- Dual
- Peak Reflow Temperature (Cel) :
- 260
- JESD-609 Code :
- e3
- Polarity/Channel Type :
- NPN
- Weight :
- 51.993025mg
- Mount :
- Surface Mount
- Width :
- 2.48mm
- Transistor Application :
- SWITCHING
- Length :
- 4.5mm
- Element Configuration :
- Single
- Collector Emitter Voltage (VCEO) :
- 32V
- Max Collector Current :
- 2A
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 180 @ 500mA 3V
- Package / Case :
- TO-243AA
- Number of Elements :
- 1
- Emitter Base Voltage (VEBO) :
- 5V
- Frequency :
- 220MHz
- Gain Bandwidth Product :
- 220MHz
- Terminal Finish :
- Matte Tin (Sn)
- Published :
- 2007
- Max Power Dissipation :
- 1W
- Collector Base Voltage (VCBO) :
- 40V
- Pin Count :
- 4
- Case Connection :
- COLLECTOR
- Current - Collector Cutoff (Max) :
- 1μA ICBO
- Vce Saturation (Max) @ Ib, Ic :
- 800mV @ 200mA, 2A
- Terminal Form :
- Flat
- Packaging :
- Tape and Reel (TR)
- Pbfree Code :
- yes
- ECCN Code :
- EAR99
- Collector Emitter Saturation Voltage :
- 800mV
- Height :
- 1.5mm
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Operating Temperature :
- -55°C~150°C TJ
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Mounting Type :
- Surface Mount
- Number of Terminations :
- 4
- Number of Pins :
- 4
- Power Dissipation :
- 1W
- REACH SVHC :
- No SVHC
- Factory Lead Time :
- 19 Weeks
- Transistor Type :
- NPN
- Transition Frequency :
- 220MHz
- Transistor Element Material :
- SILICON
- Radiation Hardening :
- No
- Collector Emitter Breakdown Voltage :
- 32V
- Datasheets
- 2DD1766R-13

NPN -55°C~150°C TJ 1μA ICBO 1 Elements 4 Terminations SILICON NPN TO-243AA Tape & Reel (TR) Surface Mount
2DD1766R-13 Overview
This device has a DC current gain of 180 @ 500mA 3V, which is the ratio between the base current and the collector current.This design offers maximum flexibility with a collector emitter saturation voltage of 800mV.A VCE saturation (Max) of 800mV @ 200mA, 2A means Ic has reached its maximum value(saturated).A high level of efficiency can be achieved if the base voltage of the emitter remains at 5V.As you can see, the part has a transition frequency of 220MHz.A breakdown input voltage of 32V volts can be used.A maximum collector current of 2A volts is possible.
2DD1766R-13 Features
the DC current gain for this device is 180 @ 500mA 3V
a collector emitter saturation voltage of 800mV
the vce saturation(Max) is 800mV @ 200mA, 2A
the emitter base voltage is kept at 5V
a transition frequency of 220MHz
2DD1766R-13 Applications
There are a lot of Diodes Incorporated
2DD1766R-13 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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