2DD1766R-13

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Mfr.Part #
2DD1766R-13
Manufacturer
Diodes Incorporated
Package / Case
TO-243AA
Datasheet
Download
Description
TRANS NPN 32V 2A SOT89-3
Stock
32,831
In Stock :
32,831

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Manufacturer :
Diodes Incorporated
Product Category :
Transistors - Bipolar (BJT) - Single
Max Breakdown Voltage :
32V
RoHS Status :
ROHS3 Compliant
Base Part Number :
2DD1766
Terminal Position :
Dual
Peak Reflow Temperature (Cel) :
260
JESD-609 Code :
e3
Polarity/Channel Type :
NPN
Weight :
51.993025mg
Mount :
Surface Mount
Width :
2.48mm
Transistor Application :
SWITCHING
Length :
4.5mm
Element Configuration :
Single
Collector Emitter Voltage (VCEO) :
32V
Max Collector Current :
2A
DC Current Gain (hFE) (Min) @ Ic, Vce :
180 @ 500mA 3V
Package / Case :
TO-243AA
Number of Elements :
1
Emitter Base Voltage (VEBO) :
5V
Frequency :
220MHz
Gain Bandwidth Product :
220MHz
Terminal Finish :
Matte Tin (Sn)
Published :
2007
Max Power Dissipation :
1W
Collector Base Voltage (VCBO) :
40V
Pin Count :
4
Case Connection :
COLLECTOR
Current - Collector Cutoff (Max) :
1μA ICBO
Vce Saturation (Max) @ Ib, Ic :
800mV @ 200mA, 2A
Terminal Form :
Flat
Packaging :
Tape and Reel (TR)
Pbfree Code :
yes
ECCN Code :
EAR99
Collector Emitter Saturation Voltage :
800mV
Height :
1.5mm
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Operating Temperature :
-55°C~150°C TJ
Time@Peak Reflow Temperature-Max (s) :
40
Mounting Type :
Surface Mount
Number of Terminations :
4
Number of Pins :
4
Power Dissipation :
1W
REACH SVHC :
No SVHC
Factory Lead Time :
19 Weeks
Transistor Type :
NPN
Transition Frequency :
220MHz
Transistor Element Material :
SILICON
Radiation Hardening :
No
Collector Emitter Breakdown Voltage :
32V
Datasheets
2DD1766R-13
Introducing Transistors - Bipolar (BJT) - Single Diodes Incorporated 2DD1766R-13 from Chip IC,where excellence meets affordability. This product stands out with its Base Part Number:2DD1766, Package / Case:TO-243AA, Operating Temperature:-55°C~150°C TJ, Mounting Type:Surface Mount, Number of Terminations:4, Number of Pins:4, 2DD1766R-13 pinout, 2DD1766R-13 datasheet PDF, 2DD1766R-13 amp .Beyond Transistors - Bipolar (BJT) - Single Diodes Incorporated 2DD1766R-13 ,we also offer BC817-40,235, BC817-40,215, BC807-40,215, Our vast inventory has you covered. Contact us now for immediate solutions.

Diodes Incorporated 2DD1766R-13


NPN -55°C~150°C TJ 1μA ICBO 1 Elements 4 Terminations SILICON NPN TO-243AA Tape & Reel (TR) Surface Mount

2DD1766R-13 Overview


This device has a DC current gain of 180 @ 500mA 3V, which is the ratio between the base current and the collector current.This design offers maximum flexibility with a collector emitter saturation voltage of 800mV.A VCE saturation (Max) of 800mV @ 200mA, 2A means Ic has reached its maximum value(saturated).A high level of efficiency can be achieved if the base voltage of the emitter remains at 5V.As you can see, the part has a transition frequency of 220MHz.A breakdown input voltage of 32V volts can be used.A maximum collector current of 2A volts is possible.

2DD1766R-13 Features


the DC current gain for this device is 180 @ 500mA 3V
a collector emitter saturation voltage of 800mV
the vce saturation(Max) is 800mV @ 200mA, 2A
the emitter base voltage is kept at 5V
a transition frequency of 220MHz


2DD1766R-13 Applications


There are a lot of Diodes Incorporated
2DD1766R-13 applications of single BJT transistors.


  • Inverter
  • Interface
  • Driver
  • Muting
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