2DD1766Q-13

Manufacturer :

Diodes Incorporated

Product Category :

Transistors - Bipolar (BJT) - Single

Packaging :

Tape and Reel (TR)

Collector Emitter Voltage (VCEO) :

32V

Width :

2.48mm

Number of Pins :

4

Emitter Base Voltage (VEBO) :

5V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Pin Count :

4

Mount :

Surface Mount

REACH SVHC :

No SVHC

Operating Temperature :

-55°C~150°C TJ

Case Connection :

COLLECTOR

Vce Saturation (Max) @ Ib, Ic :

800mV @ 200mA, 2A

Number of Terminations :

4

Peak Reflow Temperature (Cel) :

260

Weight :

51.993025mg

Polarity/Channel Type :

NPN

Power Dissipation :

1W

Collector Base Voltage (VCBO) :

40V

Terminal Form :

Flat

Max Power Dissipation :

1W

Number of Elements :

1

hFE Min :

120

Length :

4.5mm

Published :

2007

JESD-609 Code :

e3

Transistor Element Material :

SILICON

Collector Emitter Breakdown Voltage :

32V

RoHS Status :

ROHS3 Compliant

Factory Lead Time :

19 Weeks

Terminal Position :

Dual

Element Configuration :

Single

Base Part Number :

2DD1766

Terminal Finish :

Matte Tin (Sn)

Radiation Hardening :

No

Height :

1.5mm

Max Collector Current :

2A

Frequency :

220MHz

Transition Frequency :

220MHz

Transistor Application :

SWITCHING

ECCN Code :

EAR99

Current - Collector Cutoff (Max) :

1μA ICBO

Package / Case :

TO-243AA

Pbfree Code :

yes

Transistor Type :

NPN

DC Current Gain (hFE) (Min) @ Ic, Vce :

120 @ 500mA 3V

Gain Bandwidth Product :

220MHz

Time@Peak Reflow Temperature-Max (s) :

40

Mounting Type :

Surface Mount