2DD1664Q-13

Manufacturer :

Diodes Incorporated

Product Category :

Transistors - Bipolar (BJT) - Single

Peak Reflow Temperature (Cel) :

260

Radiation Hardening :

No

Factory Lead Time :

19 Weeks

Case Connection :

COLLECTOR

hFE Min :

120

RoHS Status :

ROHS3 Compliant

Collector Emitter Voltage (VCEO) :

32V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Collector Emitter Breakdown Voltage :

32V

Published :

2016

Length :

4.5mm

Gain Bandwidth Product :

280MHz

Max Collector Current :

1A

Max Breakdown Voltage :

32V

Package / Case :

TO-243AA

Terminal Form :

Flat

Transistor Application :

SWITCHING

Time@Peak Reflow Temperature-Max (s) :

40

Current - Collector Cutoff (Max) :

100nA

Emitter Base Voltage (VEBO) :

5V

Height :

1.5mm

DC Current Gain (hFE) (Min) @ Ic, Vce :

120 @ 100mA 3V

Terminal Finish :

Matte Tin (Sn)

Transistor Type :

NPN

Mounting Type :

Surface Mount

Weight :

51.993025mg

Pin Count :

4

Vce Saturation (Max) @ Ib, Ic :

400mV @ 50mA, 500mA

Polarity/Channel Type :

NPN

Base Part Number :

2DD1664

Number of Pins :

4

JESD-609 Code :

e3

Power - Max :

1W

ECCN Code :

EAR99

REACH SVHC :

No SVHC

Collector Base Voltage (VCBO) :

40V

Transistor Element Material :

SILICON

Packaging :

Tape and Reel (TR)

Width :

2.48mm

JESD-30 Code :

R-PSSO-F3

Number of Elements :

1

Number of Terminations :

3

Transition Frequency :

280MHz

Mount :

Surface Mount

Max Power Dissipation :

1W

Element Configuration :

Single

Pbfree Code :

yes

Operating Temperature :

-55°C~150°C TJ