2DD1664P-13

Manufacturer :

Diodes Incorporated

Product Category :

Transistors - Bipolar (BJT) - Single

Emitter Base Voltage (VEBO) :

5V

Operating Temperature :

-55°C~150°C TJ

Width :

2.48mm

Radiation Hardening :

No

Terminal Form :

Flat

Time@Peak Reflow Temperature-Max (s) :

40

Collector Emitter Voltage (VCEO) :

32V

Packaging :

Tape and Reel (TR)

Pbfree Code :

yes

Collector Emitter Breakdown Voltage :

32V

Peak Reflow Temperature (Cel) :

260

Number of Terminations :

3

Transistor Type :

NPN

Transistor Application :

SWITCHING

Polarity/Channel Type :

NPN

Number of Pins :

4

Mount :

Surface Mount

Factory Lead Time :

19 Weeks

Power Dissipation :

1W

Terminal Finish :

Matte Tin (Sn)

hFE Min :

82

Height :

1.5mm

Pin Count :

4

Case Connection :

COLLECTOR

DC Current Gain (hFE) (Min) @ Ic, Vce :

82 @ 100mA 3V

Element Configuration :

Single

JESD-30 Code :

R-PSSO-F3

Collector Base Voltage (VCBO) :

40V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Base Part Number :

2DD1664

Length :

4.5mm

Max Breakdown Voltage :

32V

JESD-609 Code :

e3

Gain Bandwidth Product :

280MHz

Max Power Dissipation :

1W

Current - Collector Cutoff (Max) :

100nA

RoHS Status :

ROHS3 Compliant

ECCN Code :

EAR99

Vce Saturation (Max) @ Ib, Ic :

400mV @ 50mA, 500mA

Max Collector Current :

1A

Transition Frequency :

280MHz

Package / Case :

TO-243AA

REACH SVHC :

No SVHC

Number of Elements :

1

Mounting Type :

Surface Mount

Frequency :

280MHz

Published :

2016

Weight :

51.993025mg

Transistor Element Material :

SILICON