19MT050XF

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Arrays

Published :

2003

FET Type :

4 N-Channel (H-Bridge)

Drain to Source Voltage (Vdss) :

500V

Continuous Drain Current (ID) :

31A

Max Power Dissipation :

1.14kW

Vgs(th) (Max) @ Id :

6V @ 250μA

RoHS Status :

Non-RoHS Compliant

Package / Case :

16-MTP Module

Input Capacitance (Ciss) (Max) @ Vds :

7210pF @ 25V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Series :

HEXFET®

Mount :

Chassis Mount

Power Dissipation :

1kW

Drain to Source Breakdown Voltage :

500V

Voltage - Rated DC :

500V

Current Rating :

31A

Rds On Max :

220 mΩ

Rise Time :

165ns

FET Feature :

Standard

Supplier Device Package :

16-MTP

Input Capacitance :

7.21nF

Min Operating Temperature :

-40°C

Lead Free :

Contains Lead

Max Operating Temperature :

150°C

Mounting Type :

Chassis Mount

Packaging :

Bulk

Current - Continuous Drain (Id) @ 25°C :

31A

Gate Charge (Qg) (Max) @ Vgs :

160nC @ 10V

Operating Temperature :

-40°C~150°C TJ

Power - Max :

1140W

Rds On (Max) @ Id, Vgs :

220mOhm @ 19A, 10V