ZXMN2B03E6TA

Manufacturer :

Diodes Incorporated

Product Category :

Transistors - FETs, MOSFETs - Single

Lead Free :

Lead Free

RoHS Status :

ROHS3 Compliant

Number of Pins :

6

Gate to Source Voltage (Vgs) :

8V

Radiation Hardening :

No

Turn-Off Delay Time :

33.9 ns

Vgs(th) (Max) @ Id :

1V @ 250μA

Width :

1.8mm

JESD-609 Code :

e3

Pbfree Code :

yes

Length :

3.1mm

Weight :

14.996898mg

Operating Mode :

ENHANCEMENT MODE

Package / Case :

SOT-23-6

Terminal Position :

Dual

Drain to Source Voltage (Vdss) :

20V

Time@Peak Reflow Temperature-Max (s) :

40

Height :

1.3mm

Continuous Drain Current (ID) :

5.4A

Resistance :

40mOhm

Terminal Finish :

Matte Tin (Sn)

Drain Current-Max (Abs) (ID) :

4.3A

Turn On Delay Time :

4.2 ns

ECCN Code :

EAR99

Current - Continuous Drain (Id) @ 25°C :

4.3A Ta

Gate Charge (Qg) (Max) @ Vgs :

14.5nC @ 4.5V

Number of Elements :

1

Transistor Element Material :

SILICON

Input Capacitance (Ciss) (Max) @ Vds :

1160pF @ 10V

Mount :

Surface Mount

Mounting Type :

Surface Mount

Pin Count :

6

Vgs (Max) :

±8V

Power Dissipation-Max :

1.1W Ta

Number of Terminations :

6

FET Type :

N-Channel

Number of Channels :

1

Operating Temperature :

-55°C~150°C TJ

Packaging :

Tape and Reel (TR)

REACH SVHC :

No SVHC

Power Dissipation :

1.7W

Element Configuration :

Single

Terminal Form :

Gull wing

Peak Reflow Temperature (Cel) :

260

Factory Lead Time :

17 Weeks

Published :

2006

Fall Time (Typ) :

6.2 ns

Rds On (Max) @ Id, Vgs :

40m Ω @ 4.3A, 4.5V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Transistor Application :

SWITCHING

Rise Time :

6.2ns

DS Breakdown Voltage-Min :

20V

Drive Voltage (Max Rds On,Min Rds On) :

1.8V 4.5V