ZXMN2B01FTA

Manufacturer :

Diodes Incorporated

Product Category :

Transistors - FETs, MOSFETs - Single

Rise Time :

3.6ns

Mount :

Surface Mount

Input Capacitance (Ciss) (Max) @ Vds :

370pF @ 10V

Vgs(th) (Max) @ Id :

1V @ 250μA

Published :

2006

Factory Lead Time :

17 Weeks

Radiation Hardening :

No

Continuous Drain Current (ID) :

2.4A

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Turn-Off Delay Time :

17.8 ns

Current - Continuous Drain (Id) @ 25°C :

2.1A Ta

Weight :

7.994566mg

Terminal Form :

Gull wing

Pin Count :

3

Fall Time (Typ) :

3.6 ns

Number of Terminations :

3

Vgs (Max) :

±8V

Drive Voltage (Max Rds On,Min Rds On) :

1.8V 4.5V

Resistance :

100MOhm

Power Dissipation :

806mW

Operating Mode :

ENHANCEMENT MODE

Element Configuration :

Single

ECCN Code :

EAR99

Turn On Delay Time :

2.2 ns

Transistor Application :

SWITCHING

Operating Temperature :

-55°C~150°C TJ

Number of Pins :

3

Terminal Finish :

Matte Tin (Sn)

Transistor Element Material :

SILICON

Terminal Position :

Dual

Width :

1.4mm

Length :

3.04mm

DS Breakdown Voltage-Min :

20V

RoHS Status :

ROHS3 Compliant

Gate to Source Voltage (Vgs) :

8V

JESD-609 Code :

e3

Pbfree Code :

yes

Gate Charge (Qg) (Max) @ Vgs :

4.8nC @ 4.5V

Rds On (Max) @ Id, Vgs :

100m Ω @ 2.4A, 4.5V

Number of Channels :

1

Drain to Source Voltage (Vdss) :

20V

REACH SVHC :

No SVHC

FET Type :

N-Channel

Lead Free :

Lead Free

Time@Peak Reflow Temperature-Max (s) :

40

Mounting Type :

Surface Mount

Packaging :

Tape and Reel (TR)

Package / Case :

TO-236-3, SC-59, SOT-23-3

Number of Elements :

1

Height :

1.02mm

Peak Reflow Temperature (Cel) :

260

Power Dissipation-Max :

625mW Ta