ZXMN2A14FTA

Manufacturer :

Diodes Incorporated

Product Category :

Transistors - FETs, MOSFETs - Single

Operating Mode :

ENHANCEMENT MODE

Number of Terminations :

3

Time@Peak Reflow Temperature-Max (s) :

40

Power Dissipation-Max :

1W Ta

Width :

1.4mm

Vgs (Max) :

±12V

Input Capacitance (Ciss) (Max) @ Vds :

544pF @ 10V

Gate Charge (Qg) (Max) @ Vgs :

6.6nC @ 4.5V

Radiation Hardening :

No

Element Configuration :

Single

Rise Time :

5.3ns

JESD-609 Code :

e3

Number of Channels :

1

Terminal Position :

Dual

Factory Lead Time :

17 Weeks

Fall Time (Typ) :

9.5 ns

Voltage - Rated DC :

20V

Packaging :

Tape and Reel (TR)

Continuous Drain Current (ID) :

4.1A

Current - Continuous Drain (Id) @ 25°C :

3.4A Ta

Pbfree Code :

yes

Number of Elements :

1

Transistor Application :

SWITCHING

Rds On (Max) @ Id, Vgs :

60m Ω @ 3.4A, 4.5V

Transistor Element Material :

SILICON

Vgs(th) (Max) @ Id :

700mV @ 250μA

Operating Temperature :

-55°C~150°C TJ

Gate to Source Voltage (Vgs) :

12V

REACH SVHC :

No SVHC

Height :

1.02mm

Mounting Type :

Surface Mount

FET Type :

N-Channel

Peak Reflow Temperature (Cel) :

260

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Pin Count :

3

Package / Case :

TO-236-3, SC-59, SOT-23-3

Terminal Form :

Gull wing

Drive Voltage (Max Rds On,Min Rds On) :

2.5V 4.5V

Current Rating :

3.3A

Turn-Off Delay Time :

16.6 ns

Power Dissipation :

1.5W

Published :

2007

ECCN Code :

EAR99

Lead Free :

Lead Free

Length :

3.04mm

Weight :

7.994566mg

Number of Pins :

3

Turn On Delay Time :

4 ns

RoHS Status :

ROHS3 Compliant

Drain to Source Breakdown Voltage :

20V

Mount :

Surface Mount

Resistance :

60mOhm

Terminal Finish :

Matte Tin (Sn)