ZXMN2A03E6TC

Manufacturer :

Diodes Incorporated

Product Category :

Transistors - FETs, MOSFETs - Single

Package / Case :

SOT-23-6

Rds On (Max) @ Id, Vgs :

55m Ω @ 7.2A, 4.5V

Mounting Type :

Surface Mount

Gate Charge (Qg) (Max) @ Vgs :

8.2nC @ 4.5V

Qualification Status :

Not Qualified

Terminal Position :

Dual

RoHS Status :

ROHS3 Compliant

JESD-30 Code :

R-PDSO-G6

Peak Reflow Temperature (Cel) :

260

Drain Current-Max (Abs) (ID) :

3.7A

Vgs(th) (Max) @ Id :

700mV @ 250μA

Time@Peak Reflow Temperature-Max (s) :

30

Packaging :

Tape and Reel (TR)

Transistor Element Material :

SILICON

Number of Elements :

1

Drain-source On Resistance-Max :

0.055Ohm

Surface Mount :

yes

Terminal Form :

Gull wing

Vgs (Max) :

±12V

Configuration :

SINGLE WITH BUILT-IN DIODE

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Additional Feature :

LOW THRESHOLD

Current - Continuous Drain (Id) @ 25°C :

3.7A Ta

Terminal Finish :

Matte Tin (Sn)

Transistor Application :

SWITCHING

DS Breakdown Voltage-Min :

20V

Pin Count :

6

Number of Terminations :

6

Drain to Source Voltage (Vdss) :

20V

Input Capacitance (Ciss) (Max) @ Vds :

837pF @ 10V

Operating Temperature :

-55°C~150°C TJ

Published :

2012

Power Dissipation-Max :

1.1W Ta

Operating Mode :

ENHANCEMENT MODE

ECCN Code :

EAR99

FET Type :

N-Channel

Drive Voltage (Max Rds On,Min Rds On) :

2.5V 4.5V

JESD-609 Code :

e3