ZXMN2A02X8TC

Manufacturer :

Diodes Incorporated

Product Category :

Transistors - FETs, MOSFETs - Single

Current - Continuous Drain (Id) @ 25°C :

6.2A Ta

JESD-609 Code :

e3

Terminal Finish :

MATTE TIN

Terminal Position :

Dual

Operating Mode :

ENHANCEMENT MODE

Published :

2012

FET Type :

N-Channel

Vgs (Max) :

±20V

Operating Temperature :

-55°C~150°C TJ

Power Dissipation-Max :

1.1W Ta

Drain to Source Voltage (Vdss) :

20V

Drain-source On Resistance-Max :

0.02Ohm

Terminal Form :

Gull wing

Number of Elements :

1

Packaging :

Tape and Reel (TR)

Qualification Status :

Not Qualified

Reach Compliance Code :

Compliant

Additional Feature :

LOW THRESHOLD

Time@Peak Reflow Temperature-Max (s) :

40

Mounting Type :

Surface Mount

JESD-30 Code :

R-PDSO-G8

Number of Terminations :

8

DS Breakdown Voltage-Min :

20V

Transistor Element Material :

SILICON

Input Capacitance (Ciss) (Max) @ Vds :

1900pF @ 10V

Transistor Application :

SWITCHING

Configuration :

SINGLE WITH BUILT-IN DIODE

Rds On (Max) @ Id, Vgs :

20m Ω @ 11A, 4.5V

Drain Current-Max (Abs) (ID) :

7.6A

Package / Case :

8-TSSOP, 8-MSOP (0.118, 3.00mm Width)

Surface Mount :

yes

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Pin Count :

8

RoHS Status :

RoHS Compliant

Peak Reflow Temperature (Cel) :

260

Vgs(th) (Max) @ Id :

700mV @ 250μA

Drive Voltage (Max Rds On,Min Rds On) :

2.5V 4.5V

Gate Charge (Qg) (Max) @ Vgs :

18.6nC @ 4.5V

ECCN Code :

EAR99