ZXMN2A01E6TC

Manufacturer :

Diodes Incorporated

Product Category :

Transistors - FETs, MOSFETs - Single

Gate Charge (Qg) (Max) @ Vgs :

3nC @ 4.5V

Terminal Form :

Gull wing

Peak Reflow Temperature (Cel) :

260

Drain-source On Resistance-Max :

0.12Ohm

Time@Peak Reflow Temperature-Max (s) :

40

Number of Terminations :

6

RoHS Status :

RoHS Compliant

DS Breakdown Voltage-Min :

20V

FET Type :

N-Channel

Rds On (Max) @ Id, Vgs :

120m Ω @ 4A, 4.5V

Pin Count :

6

Qualification Status :

Not Qualified

Drain to Source Voltage (Vdss) :

20V

Drain Current-Max (Abs) (ID) :

2.5A

Input Capacitance (Ciss) (Max) @ Vds :

303pF @ 15V

Mounting Type :

Surface Mount

Current - Continuous Drain (Id) @ 25°C :

2.5A Ta

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Additional Feature :

LOW THRESHOLD

Transistor Application :

SWITCHING

Transistor Element Material :

SILICON

Published :

2012

Terminal Position :

Dual

Configuration :

SINGLE WITH BUILT-IN DIODE

Vgs (Max) :

±12V

Package / Case :

SOT-23-6

Number of Elements :

1

Reach Compliance Code :

Compliant

Drive Voltage (Max Rds On,Min Rds On) :

2.5V 4.5V

JESD-609 Code :

e3

Operating Mode :

ENHANCEMENT MODE

Operating Temperature :

-55°C~150°C TJ

JESD-30 Code :

R-PDSO-G6

Power Dissipation-Max :

1.1W Ta

ECCN Code :

EAR99

Surface Mount :

yes

Packaging :

Tape and Reel (TR)

Vgs(th) (Max) @ Id :

700mV @ 250μA

Terminal Finish :

MATTE TIN