ZVP2120ASTOA

Manufacturer :

Diodes Incorporated

Product Category :

Transistors - FETs, MOSFETs - Single

JESD-609 Code :

e3

Drain to Source Voltage (Vdss) :

200V

Vgs (Max) :

±20V

Drive Voltage (Max Rds On,Min Rds On) :

10V

Mounting Type :

Through Hole

Input Capacitance (Ciss) (Max) @ Vds :

100pF @ 25V

Published :

2012

Mount :

Through Hole

Peak Reflow Temperature (Cel) :

260

Rds On (Max) @ Id, Vgs :

25 Ω @ 150mA, 10V

ECCN Code :

EAR99

RoHS Status :

RoHS Compliant

Terminal Form :

Wire

Fall Time (Typ) :

15 ns

Operating Mode :

ENHANCEMENT MODE

JESD-30 Code :

R-PSIP-W3

Time@Peak Reflow Temperature-Max (s) :

40

Continuous Drain Current (ID) :

120mA

Pin Count :

3

Transistor Element Material :

SILICON

Operating Temperature :

-55°C~150°C TJ

Package / Case :

E-Line-3

Rise Time :

15ns

Gate to Source Voltage (Vgs) :

20V

Current - Continuous Drain (Id) @ 25°C :

120mA Ta

Number of Elements :

1

Drain to Source Breakdown Voltage :

-200V

Qualification Status :

Not Qualified

Lead Free :

Lead Free

Reach Compliance Code :

Unknown

Packaging :

Tape and Reel (TR)

FET Type :

P-Channel

Number of Terminations :

3

Power Dissipation-Max :

700mW Ta

Transistor Application :

SWITCHING

Current Rating :

-120mA

Power Dissipation :

700mW

Drain Current-Max (Abs) (ID) :

0.12A

Voltage - Rated DC :

-200V

HTS Code :

8541.29.00.95

Terminal Finish :

MATTE TIN

Turn-Off Delay Time :

12 ns

Vgs(th) (Max) @ Id :

3.5V @ 1mA

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Element Configuration :

Single