ZVNL110A

Manufacturer :

Diodes Incorporated

Product Category :

Transistors - FETs, MOSFETs - Single

Peak Reflow Temperature (Cel) :

260

Mounting Type :

Through Hole

Rise Time :

12ns

RoHS Status :

ROHS3 Compliant

Mount :

Through Hole

REACH SVHC :

No SVHC

Terminal Finish :

Matte Tin (Sn)

Element Configuration :

Single

Current Rating :

320mA

Number of Channels :

1

Voltage - Rated DC :

100V

FET Type :

N-Channel

Pin Count :

3

Factory Lead Time :

17 Weeks

Fall Time (Typ) :

12 ns

Lead Free :

Lead Free

Drive Voltage (Max Rds On,Min Rds On) :

5V 10V

Gate to Source Voltage (Vgs) :

20V

Operating Mode :

ENHANCEMENT MODE

Height :

4.01mm

Published :

2006

Terminal Position :

BOTTOM

Number of Pins :

3

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Turn On Delay Time :

7 ns

JESD-609 Code :

e3

Input Capacitance (Ciss) (Max) @ Vds :

75pF @ 25V

Current - Continuous Drain (Id) @ 25°C :

320mA Ta

Packaging :

Bulk

Length :

4.77mm

Number of Terminations :

3

Drain to Source Breakdown Voltage :

100V

Weight :

453.59237mg

Radiation Hardening :

No

Width :

2.41mm

Package / Case :

TO-226-3, TO-92-3 (TO-226AA)

Operating Temperature :

-55°C~150°C TJ

ECCN Code :

EAR99

Additional Feature :

LOW THRESHOLD

Rds On (Max) @ Id, Vgs :

3 Ω @ 500mA, 10V

Vgs(th) (Max) @ Id :

1.5V @ 1mA

Transistor Element Material :

SILICON

Power Dissipation :

700mW

Number of Elements :

1

Feedback Cap-Max (Crss) :

8 pF

Vgs (Max) :

±20V

Continuous Drain Current (ID) :

320mA

Pbfree Code :

yes

Terminal Form :

Wire

Turn-Off Delay Time :

15 ns

Power Dissipation-Max :

700mW Ta

Drain-source On Resistance-Max :

3Ohm

Time@Peak Reflow Temperature-Max (s) :

40