ZVN4306ASTOB

Manufacturer :

Diodes Incorporated

Product Category :

Transistors - FETs, MOSFETs - Single

Drain-source On Resistance-Max :

0.45Ohm

Power Dissipation-Max :

850mW Ta

Time@Peak Reflow Temperature-Max (s) :

40

Terminal Form :

Wire

Reach Compliance Code :

Unknown

Qualification Status :

Not Qualified

FET Type :

N-Channel

ECCN Code :

EAR99

Turn On Delay Time :

8 ns

Mount :

Through Hole

RoHS Status :

RoHS Compliant

Current - Continuous Drain (Id) @ 25°C :

1.1A Ta

Power Dissipation :

850mW

Published :

2016

Mounting Type :

Through Hole

Peak Reflow Temperature (Cel) :

260

Terminal Finish :

MATTE TIN

Weight :

453.59237mg

Gate to Source Voltage (Vgs) :

20V

Packaging :

Tape and Reel (TR)

Turn-Off Delay Time :

30 ns

Package / Case :

E-Line-3

Transistor Element Material :

SILICON

Number of Terminations :

3

Operating Mode :

ENHANCEMENT MODE

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Rise Time :

25ns

Transistor Application :

SWITCHING

Vgs (Max) :

±20V

Fall Time (Typ) :

25 ns

JESD-30 Code :

R-PSIP-W3

JESD-609 Code :

e3

Pin Count :

3

Number of Elements :

1

Lead Free :

Lead Free

Voltage - Rated DC :

60V

Input Capacitance (Ciss) (Max) @ Vds :

350pF @ 25V

Drain to Source Breakdown Voltage :

60V

Vgs(th) (Max) @ Id :

3V @ 1mA

Operating Temperature :

-55°C~150°C TJ

Drive Voltage (Max Rds On,Min Rds On) :

5V 10V

Number of Channels :

1

Current Rating :

1.1A

Rds On (Max) @ Id, Vgs :

330m Ω @ 3A, 10V

Element Configuration :

Single

Continuous Drain Current (ID) :

1.1A