ZVN4306ASTOA

Manufacturer :

Diodes Incorporated

Product Category :

Transistors - FETs, MOSFETs - Single

Transistor Element Material :

SILICON

Weight :

453.59237mg

Operating Mode :

ENHANCEMENT MODE

Power Dissipation-Max :

850mW Ta

Radiation Hardening :

No

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Turn On Delay Time :

8 ns

Vgs (Max) :

±20V

Length :

4.77mm

Drain to Source Breakdown Voltage :

60V

Operating Temperature :

-55°C~150°C TJ

JESD-30 Code :

R-PSIP-W3

Published :

2006

Pin Count :

3

Power Dissipation :

850mW

Height :

4.01mm

Continuous Drain Current (ID) :

1.1A

Drive Voltage (Max Rds On,Min Rds On) :

5V 10V

Transistor Application :

SWITCHING

Current - Continuous Drain (Id) @ 25°C :

1.1A Ta

Current Rating :

1.1A

ECCN Code :

EAR99

Input Capacitance (Ciss) (Max) @ Vds :

350pF @ 25V

Turn-Off Delay Time :

30 ns

Time@Peak Reflow Temperature-Max (s) :

40

REACH SVHC :

No SVHC

Vgs(th) (Max) @ Id :

3V @ 1mA

Fall Time (Typ) :

25 ns

Rds On (Max) @ Id, Vgs :

330m Ω @ 3A, 10V

Mount :

Through Hole

Packaging :

Tape and Reel (TR)

Number of Channels :

1

Mounting Type :

Through Hole

Drain-source On Resistance-Max :

0.45Ohm

Number of Terminations :

3

Gate to Source Voltage (Vgs) :

20V

Rise Time :

25ns

Terminal Form :

Wire

Peak Reflow Temperature (Cel) :

260

Package / Case :

E-Line-3

Element Configuration :

Single

RoHS Status :

RoHS Compliant

Terminal Finish :

Matte Tin (Sn)

Number of Elements :

1

JESD-609 Code :

e3

Width :

2.41mm

Lead Free :

Lead Free

Voltage - Rated DC :

60V

FET Type :

N-Channel