ZVN3310FTC

Manufacturer :

Diodes Incorporated

Product Category :

Transistors - FETs, MOSFETs - Single

Turn On Delay Time :

3 ns

Rise Time :

5ns

Qualification Status :

Not Qualified

Time@Peak Reflow Temperature-Max (s) :

40

Vgs (Max) :

±20V

Terminal Finish :

MATTE TIN

Power Dissipation-Max :

330mW Ta

Drive Voltage (Max Rds On,Min Rds On) :

10V

RoHS Status :

RoHS Compliant

FET Type :

N-Channel

Voltage - Rated DC :

100V

Continuous Drain Current (ID) :

100mA

Fall Time (Typ) :

5 ns

Gate to Source Voltage (Vgs) :

20V

Operating Temperature :

-55°C~150°C TJ

ECCN Code :

EAR99

Input Capacitance (Ciss) (Max) @ Vds :

40pF @ 25V

Element Configuration :

Single

Turn-Off Delay Time :

4 ns

JESD-609 Code :

e3

Rds On (Max) @ Id, Vgs :

10 Ω @ 500mA, 10V

Number of Channels :

1

Number of Elements :

1

Terminal Form :

Gull wing

Transistor Element Material :

SILICON

Width :

1.4mm

Lead Free :

Lead Free

Length :

3.04mm

Vgs(th) (Max) @ Id :

2.4V @ 1mA

Operating Mode :

ENHANCEMENT MODE

Mounting Type :

Surface Mount

Power Dissipation :

330mW

Packaging :

Tape and Reel (TR)

Height :

1.02mm

Number of Terminations :

3

Current Rating :

200mA

Terminal Position :

Dual

Peak Reflow Temperature (Cel) :

260

Mount :

Surface Mount

Weight :

7.994566mg

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

JESD-30 Code :

R-PDSO-G3

Drain to Source Breakdown Voltage :

100V

Feedback Cap-Max (Crss) :

5 pF

Current - Continuous Drain (Id) @ 25°C :

100mA Ta

Package / Case :

TO-236-3, SC-59, SOT-23-3

Published :

2012