ZTX951
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- Mfr.Part #
- ZTX951
- Manufacturer
- Diodes Incorporated
- Package / Case
- E-Line-3
- Datasheet
- Download
- Description
- TRANS PNP 60V 4A E-LINE
- Stock
- 4,767
- In Stock ：
- 4,767
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- Manufacturer :
- Diodes Incorporated
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Terminal Form :
- Wire
- Voltage - Rated DC :
- -60V
- Package / Case :
- E-Line-3
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Number of Pins :
- 3
- Current Rating :
- -4A
- Frequency :
- 120MHz
- Current - Collector Cutoff (Max) :
- 50nA ICBO
- Polarity/Channel Type :
- PNP
- Transistor Element Material :
- SILICON
- Base Part Number :
- ZTX951
- Length :
- 4.77mm
- Mount :
- Through Hole
- Gain Bandwidth Product :
- 120MHz
- Max Power Dissipation :
- 1.2W
- Continuous Collector Current :
- -4A
- Collector Emitter Saturation Voltage :
- 300mV
- Mounting Type :
- Through Hole
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Number of Terminations :
- 3
- Pbfree Code :
- No
- Height :
- 4.01mm
- Packaging :
- Bulk
- Number of Elements :
- 1
- REACH SVHC :
- No SVHC
- Published :
- 1997
- RoHS Status :
- ROHS3 Compliant
- Transition Frequency :
- 120MHz
- JESD-609 Code :
- e3
- Terminal Finish :
- Matte Tin (Sn)
- Collector Emitter Breakdown Voltage :
- 60V
- Operating Temperature :
- -55°C~200°C TJ
- ECCN Code :
- EAR99
- Emitter Base Voltage (VEBO) :
- 6V
- Factory Lead Time :
- 15 Weeks
- Element Configuration :
- Single
- Power Dissipation :
- 1.2W
- Lead Free :
- Lead Free
- Peak Reflow Temperature (Cel) :
- 260
- Collector Emitter Voltage (VCEO) :
- 60V
- Max Collector Current :
- 4A
- Radiation Hardening :
- No
- Vce Saturation (Max) @ Ib, Ic :
- 300mV @ 400mA, 4A
- Collector Base Voltage (VCBO) :
- 100V
- Width :
- 2.41mm
- Weight :
- 453.59237mg
- Pin Count :
- 3
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 100 @ 1A 1V
- Transistor Type :
- PNP
- Datasheets
- ZTX951
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PNP -55°C~200°C TJ 50nA ICBO 1 Elements 3 Terminations SILICON PNP E-Line-3 Bulk Through Hole
ZTX951 Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 100 @ 1A 1V.Single BJT transistor has a collector emSingle BJT transistorter saturation voltage of 300mV, which allows maximum flexibilSingle BJT transistory in design.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 300mV @ 400mA, 4A.Continuous collector voltages of -4A should be maintained to achieve high efficiency.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 6V.Its current rating is -4A, which means that it can sustain a maximum current for an indefinite period of time without degrading too much.Parts of this part have transition frequencies of 120MHz.During maximum operation, collector current can be as low as 4A volts.
ZTX951 Features
the DC current gain for this device is 100 @ 1A 1V
a collector emitter saturation voltage of 300mV
the vce saturation(Max) is 300mV @ 400mA, 4A
the emitter base voltage is kept at 6V
the current rating of this device is -4A
a transition frequency of 120MHz
ZTX951 Applications
There are a lot of Diodes Incorporated
ZTX951 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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