ZTX949

Manufacturer :

Diodes Incorporated

Product Category :

Transistors - Bipolar (BJT) - Single

Mount :

Through Hole

Number of Elements :

1

Collector Emitter Breakdown Voltage :

30V

Factory Lead Time :

15 Weeks

Height :

4.01mm

Radiation Hardening :

No

Max Collector Current :

4.5A

Terminal Form :

Wire

Gain Bandwidth Product :

100MHz

Published :

2006

Pin Count :

3

Base Part Number :

ZTX949

Power Dissipation :

1.2W

Voltage - Rated DC :

-30V

DC Current Gain (hFE) (Min) @ Ic, Vce :

100 @ 1A 1V

Width :

2.41mm

Collector Base Voltage (VCBO) :

50V

Peak Reflow Temperature (Cel) :

260

Packaging :

Bulk

Transistor Element Material :

SILICON

Mounting Type :

Through Hole

Polarity/Channel Type :

PNP

Current Rating :

-4.5A

Vce Saturation (Max) @ Ib, Ic :

320mV @ 300mA, 5A

Number of Terminations :

3

Current - Collector Cutoff (Max) :

50nA ICBO

Terminal Finish :

Matte Tin (Sn)

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Package / Case :

E-Line-3

Max Power Dissipation :

1.2W

JESD-609 Code :

e3

Collector Emitter Voltage (VCEO) :

30V

Length :

4.77mm

Weight :

453.59237mg

ECCN Code :

EAR99

Frequency :

100MHz

Transition Frequency :

100MHz

RoHS Status :

ROHS3 Compliant

Continuous Collector Current :

-4.5A

Lead Free :

Lead Free

Emitter Base Voltage (VEBO) :

-6V

Time@Peak Reflow Temperature-Max (s) :

40

Transistor Type :

PNP

Number of Pins :

3

Element Configuration :

Single

Pbfree Code :

No

Power - Max :

1.58W

REACH SVHC :

No SVHC

Operating Temperature :

-55°C~200°C TJ