ZTX696B
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- Mfr.Part #
- ZTX696B
- Manufacturer
- Diodes Incorporated
- Package / Case
- E-Line-3
- Datasheet
- Download
- Description
- TRANS NPN 180V 0.5A E-LINE
- Stock
- 4,727
- In Stock ：
- 4,727
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- Manufacturer :
- Diodes Incorporated
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Power Dissipation :
- 1W
- ECCN Code :
- EAR99
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Factory Lead Time :
- 15 Weeks
- Terminal Form :
- Wire
- JESD-609 Code :
- e3
- Current Rating :
- 500mA
- Number of Pins :
- 3
- Voltage - Rated DC :
- 180V
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 150 @ 200mA 5V
- Collector Base Voltage (VCBO) :
- 180V
- Transistor Type :
- NPN
- Radiation Hardening :
- No
- Height :
- 4.01mm
- Polarity/Channel Type :
- NPN
- Operating Temperature :
- -55°C~200°C TJ
- Packaging :
- Bulk
- REACH SVHC :
- No SVHC
- Continuous Collector Current :
- 500mA
- Length :
- 4.77mm
- Max Collector Current :
- 500mA
- RoHS Status :
- ROHS3 Compliant
- Number of Elements :
- 1
- Element Configuration :
- Single
- Width :
- 2.41mm
- Base Part Number :
- ZTX696B
- Package / Case :
- E-Line-3
- Emitter Base Voltage (VEBO) :
- 5V
- Pin Count :
- 3
- Published :
- 2006
- Collector Emitter Voltage (VCEO) :
- 180V
- Transistor Element Material :
- SILICON
- Terminal Finish :
- Matte Tin (Sn)
- Vce Saturation (Max) @ Ib, Ic :
- 250mV @ 5mA, 200mA
- Weight :
- 453.59237mg
- Max Power Dissipation :
- 1W
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Collector Emitter Saturation Voltage :
- 250mV
- Number of Terminations :
- 3
- Gain Bandwidth Product :
- 70MHz
- Transistor Application :
- SWITCHING
- Frequency :
- 70MHz
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Mounting Type :
- Through Hole
- Mount :
- Through Hole
- Collector Emitter Breakdown Voltage :
- 180V
- Manufacturer Package Identifier :
- E-Line
- Lead Free :
- Contains Lead
- Peak Reflow Temperature (Cel) :
- 260
- Pbfree Code :
- yes
- Transition Frequency :
- 70MHz
- Datasheets
- ZTX696B
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NPN -55°C~200°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON NPN E-Line-3 Bulk Through Hole
ZTX696B Overview
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 150 @ 200mA 5V.The collector emitter saturation voltage is 250mV, which allows for maximum design flexibility.When VCE saturation is 250mV @ 5mA, 200mA, transistor means Ic has reached transistors maximum value (saturated).Continuous collector voltage should be kept at 500mA for high efficiency.Emitter base voltages of 5V can achieve high levels of efficiency.Fuse current ratings refer to how much current the fuse can carry for an indefinite period without deteriorating too much, and this device has a current rating of 500mA.In the part, the transition frequency is 70MHz.A maximum collector current of 500mA volts can be achieved.
ZTX696B Features
the DC current gain for this device is 150 @ 200mA 5V
a collector emitter saturation voltage of 250mV
the vce saturation(Max) is 250mV @ 5mA, 200mA
the emitter base voltage is kept at 5V
the current rating of this device is 500mA
a transition frequency of 70MHz
ZTX696B Applications
There are a lot of Diodes Incorporated
ZTX696B applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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