ZTX694BSTZ
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- Mfr.Part #
- ZTX694BSTZ
- Manufacturer
- Diodes Incorporated
- Package / Case
- E-Line-3, Formed Leads
- Datasheet
- Download
- Description
- TRANS NPN 120V 0.5A E-LINE
- Stock
- 1,884
- In Stock ：
- 1,884
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- Manufacturer :
- Diodes Incorporated
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Pbfree Code :
- yes
- Width :
- 2.41mm
- Polarity/Channel Type :
- NPN
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Gain Bandwidth Product :
- 130MHz
- Mount :
- Through Hole
- Transistor Type :
- NPN
- Number of Terminations :
- 3
- ECCN Code :
- EAR99
- RoHS Status :
- ROHS3 Compliant
- Height :
- 4.01mm
- Base Part Number :
- ZTX694B
- Max Collector Current :
- 500mA
- Collector Emitter Saturation Voltage :
- 500mV
- Collector Base Voltage (VCBO) :
- 120V
- Packaging :
- Tape and Box (TB)
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- HTS Code :
- 8541.29.00.75
- Vce Saturation (Max) @ Ib, Ic :
- 500mV @ 5mA, 400mA
- Transistor Element Material :
- SILICON
- Lead Free :
- Lead Free
- Number of Pins :
- 3
- Operating Temperature :
- -55°C~200°C TJ
- Package / Case :
- E-Line-3, Formed Leads
- JESD-609 Code :
- e3
- Factory Lead Time :
- 15 Weeks
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Max Power Dissipation :
- 1W
- Pin Count :
- 3
- Voltage - Rated DC :
- 120V
- Published :
- 2012
- Emitter Base Voltage (VEBO) :
- 5V
- Current Rating :
- 500mA
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 400 @ 200mA 2V
- Continuous Collector Current :
- 500mA
- Weight :
- 453.59237mg
- REACH SVHC :
- No SVHC
- Length :
- 4.77mm
- Transistor Application :
- SWITCHING
- Collector Emitter Voltage (VCEO) :
- 120V
- Peak Reflow Temperature (Cel) :
- 260
- Radiation Hardening :
- No
- Terminal Form :
- Wire
- Terminal Finish :
- Matte Tin (Sn)
- Mounting Type :
- Through Hole
- Element Configuration :
- Single
- Transition Frequency :
- 130MHz
- Number of Elements :
- 1
- Collector Emitter Breakdown Voltage :
- 120V
- Datasheets
- ZTX694BSTZ
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NPN -55°C~200°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON NPN E-Line-3, Formed Leads Tape & Box (TB) Through Hole
ZTX694BSTZ Overview
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 400 @ 200mA 2V.The collector emitter saturation voltage is 500mV, which allows for maximum design flexibility.When VCE saturation is 500mV @ 5mA, 400mA, transistor means Ic has reached transistors maximum value (saturated).Continuous collector voltage should be kept at 500mA for high efficiency.Emitter base voltages of 5V can achieve high levels of efficiency.Fuse current ratings refer to how much current the fuse can carry for an indefinite period without deteriorating too much, and this device has a current rating of 500mA.In the part, the transition frequency is 130MHz.A maximum collector current of 500mA volts can be achieved.
ZTX694BSTZ Features
the DC current gain for this device is 400 @ 200mA 2V
a collector emitter saturation voltage of 500mV
the vce saturation(Max) is 500mV @ 5mA, 400mA
the emitter base voltage is kept at 5V
the current rating of this device is 500mA
a transition frequency of 130MHz
ZTX694BSTZ Applications
There are a lot of Diodes Incorporated
ZTX694BSTZ applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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