ZTX688BSTOA
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- Mfr.Part #
- ZTX688BSTOA
- Manufacturer
- Diodes Incorporated
- Package / Case
- E-Line-3, Formed Leads
- Datasheet
- Download
- Description
- TRANS NPN 12V 3A E-LINE
- Stock
- 40,549
- In Stock ：
- 40,549
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- Manufacturer :
- Diodes Incorporated
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Collector Emitter Saturation Voltage :
- 350mV
- Weight :
- 453.59237mg
- Collector Emitter Voltage (VCEO) :
- 350mV
- Package / Case :
- E-Line-3, Formed Leads
- Transition Frequency :
- 150MHz
- Packaging :
- Tape and Reel (TR)
- Mounting Type :
- Through Hole
- Peak Reflow Temperature (Cel) :
- 260
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 500 @ 100mA 2V
- Width :
- 2.41mm
- Emitter Base Voltage (VEBO) :
- 5V
- Lead Free :
- Lead Free
- Transistor Application :
- SWITCHING
- JESD-30 Code :
- R-PSIP-W3
- Pin Count :
- 3
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Operating Temperature :
- -55°C~200°C TJ
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Voltage - Rated DC :
- 12V
- Number of Terminations :
- 3
- HTS Code :
- 8541.29.00.75
- Height :
- 4.01mm
- Vce Saturation (Max) @ Ib, Ic :
- 350mV @ 20mA, 3A
- Max Collector Current :
- 3A
- Number of Elements :
- 1
- Mount :
- Through Hole
- Transistor Element Material :
- SILICON
- RoHS Status :
- RoHS Compliant
- Current Rating :
- 3A
- Terminal Finish :
- MATTE TIN
- Base Part Number :
- ZTX688B
- Max Power Dissipation :
- 1W
- Collector Emitter Breakdown Voltage :
- 12V
- REACH SVHC :
- No SVHC
- Element Configuration :
- Single
- Terminal Form :
- Wire
- JESD-609 Code :
- e3
- Continuous Collector Current :
- 3A
- ECCN Code :
- EAR99
- Transistor Type :
- NPN
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Collector Base Voltage (VCBO) :
- 12V
- Length :
- 4.77mm
- Gain Bandwidth Product :
- 150MHz
- Polarity/Channel Type :
- NPN
- Qualification Status :
- Not Qualified
- Datasheets
- ZTX688BSTOA
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NPN -55°C~200°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON NPN E-Line-3, Formed Leads Tape & Reel (TR) Through Hole
ZTX688BSTOA Overview
As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 500 @ 100mA 2V.Single BJT transistor offers maximum design flexibilSingle BJT transistory wSingle BJT transistorh a collector emSingle BJT transistorter saturation voltage of 350mV.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 350mV @ 20mA, 3A.Single BJT transistor is recommended to keep the continuous collector voltage at 3A in order to achieve high efficiency.The emitter base voltage can be kept at 5V for high efficiency.The current rating of this fuse is 3A, which means that transistor can carry an indefintransistore amount of current wtransistorhout deteriorating too much.The part has a transition frequency of 150MHz.Single BJT transistor is possible to have a collector current as low as 3A volts at Single BJT transistors maximum.
ZTX688BSTOA Features
the DC current gain for this device is 500 @ 100mA 2V
a collector emitter saturation voltage of 350mV
the vce saturation(Max) is 350mV @ 20mA, 3A
the emitter base voltage is kept at 5V
the current rating of this device is 3A
a transition frequency of 150MHz
ZTX688BSTOA Applications
There are a lot of Diodes Incorporated
ZTX688BSTOA applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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