ZTX655STOA
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- Mfr.Part #
- ZTX655STOA
- Manufacturer
- Diodes Incorporated
- Package / Case
- E-Line-3, Formed Leads
- Datasheet
- Download
- Description
- TRANS NPN 150V 1A E-LINE
- Stock
- 36,798
- In Stock ：
- 36,798
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- Manufacturer :
- Diodes Incorporated
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Number of Elements :
- 1
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Number of Terminations :
- 3
- Height :
- 4.01mm
- Peak Reflow Temperature (Cel) :
- 260
- Mount :
- Through Hole
- RoHS Status :
- RoHS Compliant
- Emitter Base Voltage (VEBO) :
- 5V
- Gain Bandwidth Product :
- 30MHz
- Max Collector Current :
- 1A
- Transistor Element Material :
- SILICON
- Collector Base Voltage (VCBO) :
- 150V
- Lead Free :
- Lead Free
- Max Power Dissipation :
- 1W
- Length :
- 4.77mm
- Published :
- 2012
- Width :
- 2.41mm
- Mounting Type :
- Through Hole
- Qualification Status :
- Not Qualified
- Collector Emitter Voltage (VCEO) :
- 500mV
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- HTS Code :
- 8541.29.00.95
- Vce Saturation (Max) @ Ib, Ic :
- 500mV @ 200mA, 1A
- Transition Frequency :
- 30MHz
- Terminal Form :
- Wire
- Polarity/Channel Type :
- NPN
- Pin Count :
- 3
- Terminal Finish :
- Matte Tin (Sn)
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 50 @ 500mA 5V
- Packaging :
- Tape and Reel (TR)
- Current Rating :
- 1A
- Package / Case :
- E-Line-3, Formed Leads
- JESD-609 Code :
- e3
- ECCN Code :
- EAR99
- Continuous Collector Current :
- 1A
- Weight :
- 453.59237mg
- JESD-30 Code :
- R-PSIP-W3
- Operating Temperature :
- -55°C~200°C TJ
- Collector Emitter Saturation Voltage :
- 500mV
- Voltage - Rated DC :
- 150V
- Transistor Type :
- NPN
- Base Part Number :
- ZTX655
- Collector Emitter Breakdown Voltage :
- 150V
- Element Configuration :
- Single
- Transistor Application :
- SWITCHING
- Datasheets
- ZTX655STOA
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NPN -55°C~200°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON NPN E-Line-3, Formed Leads Tape & Reel (TR) Through Hole
ZTX655STOA Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 50 @ 500mA 5V.With a collector emitter saturation voltage of 500mV, it offers maximum design flexibility.Vce saturation means Ic is at its maximum value(saturated), and the vce saturation(Max) is 500mV @ 200mA, 1A.In order to achieve high efficiency, the continuous collector voltage should be kept at 1A.If the emitter base voltage is kept at 5V, a high level of efficiency can be achieved.In definition, current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating too much, and the current rating of this device is 1A.A transition frequency of 30MHz is present in the part.Collector current can be as low as 1A volts at its maximum.
ZTX655STOA Features
the DC current gain for this device is 50 @ 500mA 5V
a collector emitter saturation voltage of 500mV
the vce saturation(Max) is 500mV @ 200mA, 1A
the emitter base voltage is kept at 5V
the current rating of this device is 1A
a transition frequency of 30MHz
ZTX655STOA Applications
There are a lot of Diodes Incorporated
ZTX655STOA applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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