ZTX653STOB
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- Mfr.Part #
- ZTX653STOB
- Manufacturer
- Diodes Incorporated
- Package / Case
- E-Line-3, Formed Leads
- Datasheet
- Download
- Description
- TRANS NPN 100V 2A E-LINE
- Stock
- 32,725
- In Stock ：
- 32,725
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- Manufacturer :
- Diodes Incorporated
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Height :
- 4.01mm
- Collector Base Voltage (VCBO) :
- 120V
- ECCN Code :
- EAR99
- Mounting Type :
- Through Hole
- Transistor Application :
- SWITCHING
- Reference Standard :
- CECC
- Number of Pins :
- 3
- Number of Elements :
- 1
- Continuous Collector Current :
- 2A
- Width :
- 2.41mm
- Pin Count :
- 3
- Terminal Form :
- Wire
- Operating Temperature :
- -55°C~200°C TJ
- RoHS Status :
- RoHS Compliant
- Current Rating :
- 2A
- Published :
- 2012
- Collector Emitter Voltage (VCEO) :
- 100V
- Weight :
- 453.59237mg
- DC Current Gain-Min (hFE) :
- 25
- Emitter Base Voltage (VEBO) :
- 5V
- Length :
- 4.77mm
- Transistor Element Material :
- SILICON
- Voltage - Rated DC :
- 100V
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Collector Emitter Breakdown Voltage :
- 100V
- Max Collector Current :
- 2A
- Element Configuration :
- Single
- Polarity/Channel Type :
- NPN
- JESD-609 Code :
- e3
- Package / Case :
- E-Line-3, Formed Leads
- Frequency :
- 175MHz
- Mount :
- Through Hole
- Packaging :
- Tape and Reel (TR)
- Number of Terminations :
- 3
- Terminal Finish :
- MATTE TIN
- Gain Bandwidth Product :
- 175MHz
- Qualification Status :
- Not Qualified
- Base Part Number :
- ZTX653
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Max Power Dissipation :
- 1W
- Transition Frequency :
- 140MHz
- Transistor Type :
- NPN
- Vce Saturation (Max) @ Ib, Ic :
- 500mV @ 200mA, 2A
- Peak Reflow Temperature (Cel) :
- 260
- Power Dissipation :
- 1W
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Lead Free :
- Lead Free
- Datasheets
- ZTX653STOB
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NPN -55°C~200°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON NPN E-Line-3, Formed Leads Tape & Reel (TR) Through Hole
ZTX653STOB Description
ZTX653STOB is a 120V NPN silicon planar medium power transistor. Discrete Bipolar Junction Transistors (BJTs) are commonly used to construct analog signal amplification functions in audio, radio, and other applications. One of the first semiconductor devices to be mass produced, their characteristics are less favorable than those of other device types for applications involving high-frequency switching and operation with high currents or voltages, but they remain a technology of choice for applications requiring analog signal reproduction with minimal added noise and distortion.
ZTX653STOB Features
100 Volt VCEO
2 Amp continuous current
Low saturation voltage
Ptot=1 Watt
ZTX653STOB Applications
Automotive
Advanced driver assistance systems (ADAS)
Industrial
Building automation
Enterprise systems
Enterprise machine
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