ZTX649
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- Mfr.Part #
- ZTX649
- Manufacturer
- Diodes Incorporated
- Package / Case
- E-Line-3
- Datasheet
- Download
- Description
- TRANS NPN 25V 2A E-LINE
- Stock
- 1
- In Stock ：
- 1
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- Manufacturer :
- Diodes Incorporated
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Lead Free :
- Lead Free
- Radiation Hardening :
- No
- Transition Frequency :
- 240MHz
- Width :
- 2.41mm
- Factory Lead Time :
- 15 Weeks
- Number of Pins :
- 3
- Height :
- 4.01mm
- Collector Base Voltage (VCBO) :
- 35V
- Terminal Finish :
- Matte Tin (Sn)
- JESD-609 Code :
- e3
- Transistor Application :
- SWITCHING
- ECCN Code :
- EAR99
- Current Rating :
- 2A
- Transistor Type :
- NPN
- Max Collector Current :
- 2A
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 100 @ 1A 2V
- Collector Emitter Voltage (VCEO) :
- 25V
- Packaging :
- Bulk
- Package / Case :
- E-Line-3
- Frequency :
- 240MHz
- RoHS Status :
- ROHS3 Compliant
- Pin Count :
- 3
- Length :
- 4.77mm
- Pbfree Code :
- yes
- Operating Temperature :
- -55°C~200°C TJ
- Number of Elements :
- 1
- Power Dissipation :
- 1W
- Polarity/Channel Type :
- NPN
- Mounting Type :
- Through Hole
- Number of Terminations :
- 3
- Transistor Element Material :
- SILICON
- Published :
- 2012
- Emitter Base Voltage (VEBO) :
- 5V
- Weight :
- 453.59237mg
- Base Part Number :
- ZTX649
- Max Power Dissipation :
- 1W
- Collector Emitter Saturation Voltage :
- 230mV
- REACH SVHC :
- No SVHC
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Gain Bandwidth Product :
- 240MHz
- Voltage - Rated DC :
- 25V
- Collector Emitter Breakdown Voltage :
- 25V
- Continuous Collector Current :
- 2A
- Element Configuration :
- Single
- Mount :
- Through Hole
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Vce Saturation (Max) @ Ib, Ic :
- 500mV @ 200mA, 2A
- Peak Reflow Temperature (Cel) :
- 260
- Terminal Form :
- Wire
- Datasheets
- ZTX649
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NPN -55°C~200°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON NPN E-Line-3 Bulk Through Hole
ZTX649 Overview
DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 100 @ 1A 2V DC current gain.As it features a collector emitter saturation voltage of 230mV, it allows for maximum design flexibility.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.For high efficiency, the continuous collector voltage must be kept at 2A.Keeping the emitter base voltage at 5V can result in a high level of efficiency.According to definition, current rating describes the maximum current a fuse can carry indefinitely without deteriorating too much, and this device has no current rating.There is a transition frequency of 240MHz in the part.When collector current reaches its maximum, it can reach 2A volts.
ZTX649 Features
the DC current gain for this device is 100 @ 1A 2V
a collector emitter saturation voltage of 230mV
the vce saturation(Max) is 500mV @ 200mA, 2A
the emitter base voltage is kept at 5V
the current rating of this device is 2A
a transition frequency of 240MHz
ZTX649 Applications
There are a lot of Diodes Incorporated
ZTX649 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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