ZTX614

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Mfr.Part #
ZTX614
Manufacturer
onsemi
Package / Case
E-Line-3
Datasheet
Download
Description
TRANS NPN DARL 100V 0.8A TO226
Stock
1
In Stock :
1

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Manufacturer :
onsemi
Product Category :
Transistors - Bipolar (BJT) - Single
Max Collector Current :
800mA
Collector Emitter Saturation Voltage :
1.25V
Package / Case :
E-Line-3
Number of Elements :
1
ECCN Code :
EAR99
Collector Emitter Breakdown Voltage :
100V
Pbfree Code :
yes
Element Configuration :
Single
REACH SVHC :
No SVHC
Weight :
453.59237mg
DC Current Gain (hFE) (Min) @ Ic, Vce :
10000 @ 500mA 5V
Collector Emitter Voltage (VCEO) :
100V
Number of Terminations :
3
Pin Count :
3
Lead Free :
Lead Free
Power Dissipation :
1W
Current Rating :
800mA
Operating Temperature :
-55°C~200°C TJ
Number of Pins :
3
RoHS Status :
ROHS3 Compliant
Continuous Collector Current :
800mA
Max Power Dissipation :
1W
Vce Saturation (Max) @ Ib, Ic :
1.25V @ 8mA, 800mA
Length :
4.77mm
Emitter Base Voltage (VEBO) :
10V
Packaging :
Bulk
Time@Peak Reflow Temperature-Max (s) :
40
Base Part Number :
ZTX614
Transistor Type :
NPN - Darlington
Mounting Type :
Through Hole
JESD-609 Code :
e3
Terminal Finish :
Matte Tin (Sn)
Height :
4.01mm
Factory Lead Time :
15 Weeks
Width :
2.41mm
Terminal Form :
Wire
Polarity :
NPN
Voltage - Rated DC :
100V
Published :
2006
Current - Collector Cutoff (Max) :
100nA ICBO
Peak Reflow Temperature (Cel) :
260
Radiation Hardening :
No
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Collector Base Voltage (VCBO) :
120V
Mount :
Through Hole
Transistor Element Material :
SILICON
Datasheets
ZTX614
Introducing Transistors - Bipolar (BJT) - Single onsemi ZTX614 from Chip IC,where excellence meets affordability. This product stands out with its Package / Case:E-Line-3, Number of Terminations:3, Operating Temperature:-55°C~200°C TJ, Number of Pins:3, Base Part Number:ZTX614, Mounting Type:Through Hole, ZTX614 pinout, ZTX614 datasheet PDF, ZTX614 amp .Beyond Transistors - Bipolar (BJT) - Single onsemi ZTX614 ,we also offer BC817-40,235, BC817-40,215, BC807-40,215, Our vast inventory has you covered. Contact us now for immediate solutions.

onsemi ZTX614


NPN - Darlington -55°C~200°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON E-Line-3 Bulk Through Hole

ZTX614 Overview


This device has a DC current gain of 10000 @ 500mA 5V, which is the ratio between the collector current and the base current.A collector emitter saturation voltage of 1.25V allows maximum design flexibility.A VCE saturation indicates a maximum value of Ic (saturation), and a maximum value of VCE saturation (Max).A constant collector voltage of 800mA is necessary for high efficiency.The base voltage of the emitter can be kept at 10V to achieve high efficiency.Normally, a fuse's current rating refers to how much current it can carry without deteriorating too much, which in this case is 800mA.The maximum collector current is 800mA volts.

ZTX614 Features


the DC current gain for this device is 10000 @ 500mA 5V
a collector emitter saturation voltage of 1.25V
the vce saturation(Max) is 1.25V @ 8mA, 800mA
the emitter base voltage is kept at 10V
the current rating of this device is 800mA


ZTX614 Applications


There are a lot of Diodes Incorporated
ZTX614 applications of single BJT transistors.


  • Inverter
  • Interface
  • Driver
  • Muting
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