WPB4001-1E

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Mfr.Part #
WPB4001-1E
Manufacturer
onsemi
Package / Case
TO-3P-3, SC-65-3
Datasheet
Download
Description
MOSFET N-CH 500V 26A TO3P-3L
Stock
11,713
In Stock :
11,713

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Manufacturer :
onsemi
Product Category :
Transistors - FETs, MOSFETs - Single
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Power Dissipation-Max :
2.5W Ta 220W Tc
Gate to Source Voltage (Vgs) :
30V
Continuous Drain Current (ID) :
26A
Input Capacitance (Ciss) (Max) @ Vds :
2250pF @ 30V
Number of Pins :
3
Pbfree Code :
yes
Gate Charge (Qg) (Max) @ Vgs :
87nC @ 10V
Packaging :
Tube
Radiation Hardening :
No
Rise Time :
156ns
Operating Temperature :
150°C TJ
Drive Voltage (Max Rds On,Min Rds On) :
10V
Mount :
Through Hole
Terminal Finish :
Tin (Sn)
Pin Count :
3
ECCN Code :
EAR99
Turn On Delay Time :
44 ns
Mounting Type :
Through Hole
Current - Continuous Drain (Id) @ 25°C :
26A Ta
Rds On (Max) @ Id, Vgs :
260m Ω @ 13A, 10V
Weight :
6.961991g
Vgs (Max) :
±30V
Package / Case :
TO-3P-3, SC-65-3
Fall Time (Typ) :
94 ns
RoHS Status :
RoHS Compliant
JESD-609 Code :
e3
Drain to Source Breakdown Voltage :
500V
FET Type :
N-Channel
Turn-Off Delay Time :
224 ns
Published :
2015
Lead Free :
Lead Free
Datasheets
WPB4001-1E
Introducing Transistors - FETs, MOSFETs - Single onsemi WPB4001-1E from Chip IC,where excellence meets affordability. This product stands out with its Number of Pins:3, Operating Temperature:150°C TJ, Mounting Type:Through Hole, Package / Case:TO-3P-3, SC-65-3, WPB4001-1E pinout, WPB4001-1E datasheet PDF, WPB4001-1E amp .Beyond Transistors - FETs, MOSFETs - Single onsemi WPB4001-1E ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.



N-Channel Tube 260m Ω @ 13A, 10V ±30V 2250pF @ 30V 87nC @ 10V TO-3P-3, SC-65-3

WPB4001-1E Overview


A device's maximum input capacitance is 2250pF @ 30V, but its input capacitance parameter, CI, is measured as the capacitance between the input terminals of the device with either input grounded.Its continuous drain current is 26A for this device. Drain current refers to the capacity of the device to conduct continuous current.Single MOSFETs transistor is the voltage at which VDS flows at a specified ID value, wSingle MOSFETs transistorh VGS=500V, and this device has a drain-to-source breakdown voltage of 500V voltage.A device's turn-off delay time is the amount of time it takes to charge its input capacitance before drain current conduction can begin, which is 224 ns.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 44 ns.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 30V.This device uses no drive voltage (10V) to reduce its overall power consumption.

WPB4001-1E Features


a continuous drain current (ID) of 26A
a drain-to-source breakdown voltage of 500V voltage
the turn-off delay time is 224 ns


WPB4001-1E Applications


There are a lot of ON Semiconductor
WPB4001-1E applications of single MOSFETs transistors.


  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
  • PFC stages, hard switching PWM stages and resonant switching
  • PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
  • Lighting, Server, Telecom and UPS.
  • DC-to-DC converters
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