VS-FB190SA10

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Mfr.Part #
VS-FB190SA10
Manufacturer
Vishay
Package / Case
SOT-227-4, miniBLOC
Datasheet
Download
Description
MOSFET N-CH 100V 190A SOT227
Stock
1
In Stock :
1

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Manufacturer :
Vishay
Product Category :
Transistors - FETs, MOSFETs - Single
Height :
12.3mm
Terminal Position :
UPPER
Width :
25.7mm
Pulsed Drain Current-Max (IDM) :
720A
Rise Time :
351ns
Terminal Form :
UNSPECIFIED
Case Connection :
Isolated
Turn-Off Delay Time :
181 ns
Gate to Source Voltage (Vgs) :
20V
Drain to Source Voltage (Vdss) :
100V
Mount :
Chassis Mount, Screw, Surface Mount
Number of Terminations :
4
Drive Voltage (Max Rds On,Min Rds On) :
10V
Pin Count :
4
Number of Channels :
1
Avalanche Energy Rating (Eas) :
700 mJ
Packaging :
Tube
Power Dissipation :
568W
Continuous Drain Current (ID) :
190A
Gate Charge (Qg) (Max) @ Vgs :
250nC @ 10V
ECCN Code :
EAR99
FET Type :
N-Channel
Vgs(th) (Max) @ Id :
4.35V @ 250μA
Operating Temperature :
-55°C~150°C TJ
Mounting Type :
Chassis Mount
Number of Elements :
1
Vgs (Max) :
±20V
Factory Lead Time :
20 Weeks
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Published :
2013
REACH SVHC :
Unknown
Drain-source On Resistance-Max :
0.0065ohm
Nominal Vgs :
3.3 V
Transistor Application :
SWITCHING
Package / Case :
SOT-227-4, miniBLOC
Element Configuration :
Single
Turn On Delay Time :
45 ns
Additional Feature :
AVALANCHE RATED
Weight :
30.000004g
Fall Time (Typ) :
335 ns
RoHS Status :
ROHS3 Compliant
Rds On (Max) @ Id, Vgs :
6.5m Ω @ 180A, 10V
Radiation Hardening :
No
Length :
38.3mm
Operating Mode :
ENHANCEMENT MODE
Threshold Voltage :
3.3V
Transistor Element Material :
SILICON
Input Capacitance (Ciss) (Max) @ Vds :
10700pF @ 25V
Number of Pins :
4
Power Dissipation-Max :
568W Tc
Datasheets
VS-FB190SA10
Introducing Transistors - FETs, MOSFETs - Single Vishay VS-FB190SA10 from Chip IC,where excellence meets affordability. This product stands out with its Number of Terminations:4, Number of Channels:1, Operating Temperature:-55°C~150°C TJ, Mounting Type:Chassis Mount, Package / Case:SOT-227-4, miniBLOC, Number of Pins:4, VS-FB190SA10 pinout, VS-FB190SA10 datasheet PDF, VS-FB190SA10 amp .Beyond Transistors - FETs, MOSFETs - Single Vishay VS-FB190SA10 ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Vishay VS-FB190SA10


N-Channel Tube 6.5m Ω @ 180A, 10V ±20V 10700pF @ 25V 250nC @ 10V 100V SOT-227-4, miniBLOC

VS-FB190SA10 Overview


This type of breakdown is known as "avalanche breakdown", and the energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating (Eas) is 700 mJ.The maximum input capacitance of this device is 10700pF @ 25V, because the input capacitance of an op amp is defined as the difference between the input terminals with one input grounded.Continuous drain current (ID) is the maximum continuous current (ID) the device can conduct, and it is 190A.Before drain current conduction can begin, the device's turn-off delay time must be charged up to full capacitance. This value is 181 ns.There is no pulsed drain current maximum for this device based on its rated peak drain current 720A.During device turn-on, the input capacitance must be charged for a period of time before drain current conduction can begin, so its delay time is 45 ns seconds.Single MOSFETs transistor is the voltage across the gate-source terminal of a transistor that determines the gate-source voltage, VGS.This transistor's threshold voltage is 3.3V volts, which indicates that a transistor is ready to perform any of its operations at that voltage.The drain-to-source voltage (Vdss) of this transistor needs to be at 100V in order to operate.Using drive voltage (10V), this device helps reduce its power consumption.

VS-FB190SA10 Features


the avalanche energy rating (Eas) is 700 mJ
a continuous drain current (ID) of 190A
the turn-off delay time is 181 ns
based on its rated peak drain current 720A.
a threshold voltage of 3.3V
a 100V drain to source voltage (Vdss)


VS-FB190SA10 Applications


There are a lot of Vishay Semiconductor Diodes Division
VS-FB190SA10 applications of single MOSFETs transistors.


  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
  • PFC stages, hard switching PWM stages and resonant switching
  • PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
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