VP2450N8-G

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Mfr.Part #
VP2450N8-G
Manufacturer
Microchip Technology
Package / Case
TO-243AA
Datasheet
Download
Description
MOSFET P-CH 500V 160MA TO243AA
Stock
7,264
In Stock :
7,264

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Manufacturer :
Microchip Technology
Product Category :
Transistors - FETs, MOSFETs - Single
Mounting Type :
Surface Mount
Product :
MOSFET Small Signal
Brand :
Microchip Technology
Rds On (Max) @ Id, Vgs :
30 Ω @ 100mA, 10V
Operating Mode :
ENHANCEMENT MODE
Power Dissipation (Max) :
1.6W (Ta)
Terminal Position :
Single
Height :
1.6mm
Channel Type :
P
JEDEC-95 Code :
TO-243AA
Pulsed Drain Current-Max (IDM) :
0.8A
MSL :
MSL 1 - Unlimited
Drain to Source Voltage (Vdss) :
500V
Power Dissipation :
1.6W
RoHS :
Details
Terminal Finish :
Matte Tin (Sn)
FET Technology :
METAL-OXIDE SEMICONDUCTOR
Transistor Polarity :
P-Channel
Supplier Device Package :
TO-243AA (SOT-89)
ECCN Code :
EAR99
Fall Time (Typ) :
25 ns
Vgs(th) (Max) @ Id :
3.5V @ 1mA
Package / Case :
TO-243AA
Mount :
Surface Mount
Weight :
52.786812mg
Continuous Drain Current (ID) :
160mA
Package :
Tape and Reel (TR);Cut Tape (CT);Digi-Reel®;
Transistor Element Material :
SILICON
Peak Reflow Temperature (Cel) :
260
Vgs (Max) :
±20V
Number of Channels :
1
Turn-Off Delay Time :
45 ns
Package Shape :
RECTANGULAR
Type :
FET
Polarity/Channel Type :
P-Channel
Packaging :
Tape and Reel (TR)
Qualification Status :
Not Qualified
Transistor Type :
1 P-Channel
Pin Count :
3
Channel Mode :
Enhancement
Drain to Source Breakdown Voltage :
-500V
Number of Elements :
1
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Rise Time :
25ns
Input Capacitance (Ciss) (Max) @ Vds :
190pF @ 25V
Surface Mount :
yes
Number of Terminations :
3
Continuous Drain Current Id :
160
DS Breakdown Voltage-Min :
500 V
Subcategory :
MOSFETs
Package Type :
SOT-89
Radiation Hardening :
No
Configuration :
Single
Maximum Operating Temperature :
+150 °C
Product Type :
MOSFET
Product Category :
MOSFET
Product Status :
Active
Series :
--
Published :
2007
Gate to Source Voltage (Vgs) :
20V
Number of Pins :
4
Transistor Application :
SWITCHING
Number of Terminals :
3
Terminal Form :
Flat
Number of Elements per Chip :
1
Reach Compliance Code :
Compliant
Drive Voltage (Max Rds On,Min Rds On) :
4.5V 10V
Drain-source On Resistance-Max :
30 Ω
Operating Temperature :
-55°C~150°C TJ
FET Type :
P-Channel
Time@Peak Reflow Temperature-Max (s) :
40
RoHS Status :
ROHS3 Compliant
Length :
4.6mm
Current - Continuous Drain (Id) @ 25°C :
160mA Tj
Turn On Delay Time :
10 ns
JESD-609 Code :
e3
JESD-30 Code :
R-PSSO-F3
Manufacturer :
Microchip
FET Feature :
--
Power Dissipation-Max :
1.6W Ta
Mounting Style :
SMD/SMT
Minimum Operating Temperature :
-55 °C
Factory Lead Time :
6 Weeks
Qualification :
-
Element Configuration :
Single
Case Connection :
DRAIN
Base Product Number :
VP2450
Width :
2.6mm
Datasheets
VP2450N8-G
Introducing Transistors - FETs, MOSFETs - Single Microchip Technology VP2450N8-G from Chip IC,where excellence meets affordability. This product stands out with its Mounting Type:Surface Mount, Package / Case:TO-243AA, Number of Channels:1, Type:FET, Number of Terminations:3, Number of Pins:4, Operating Temperature:-55°C~150°C TJ, VP2450N8-G pinout, VP2450N8-G datasheet PDF, VP2450N8-G amp .Beyond Transistors - FETs, MOSFETs - Single Microchip Technology VP2450N8-G ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Microchip Technology VP2450N8-G


P-Channel Tape & Reel (TR) 30 Ω @ 100mA, 10V ±20V 190pF @ 25V 500V TO-243AA

VP2450N8-G Overview


Input capacitance, CI, is defined as the capacitance between two input terminals of an op amp with one input grounded, and the input capacitance of this device is 190pF @ 25V.This device has a continuous drain current (ID) of [160mA], which is its maximum continuous current.At a given drain-source breakdown voltage, a specified value of ID will flow. With VGS=-500V, the drain-source breakdown voltage is -500V.The turn-off delay time of a device is the time it takes to charge its input capacitance before drain current can flow. The turn-off delay time of a device is 45 ns.A maximum pulsed drain current of 0.8A is the maximum peak drain current rated for this device.During turn-on, the input capacitance of the device is charged before drain current conduction starts, so its delay time is 10 ns.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 20V volts.In order to maintain normal operation, it is recommended to keep the DS breakdown voltage above 500 V.In order to operate this transistor, a voltage of 500V is needed from the drain to the source (Vdss).Its overall power consumption can be reduced by using drive voltage (4.5V 10V).

VP2450N8-G Features


a continuous drain current (ID) of 160mA
a drain-to-source breakdown voltage of -500V voltage
the turn-off delay time is 45 ns
based on its rated peak drain current 0.8A.
a 500V drain to source voltage (Vdss)


VP2450N8-G Applications


There are a lot of Microchip Technology
VP2450N8-G applications of single MOSFETs transistors.


  • Uninterruptible Power Supply
  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
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