VP2450N8-G
- Mfr.Part #
- VP2450N8-G
- Manufacturer
- Microchip Technology
- Package / Case
- TO-243AA
- Datasheet
- Download
- Description
- MOSFET P-CH 500V 160MA TO243AA
- Stock
- 7,264
- In Stock :
- 7,264
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- Manufacturer :
- Microchip Technology
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Mounting Type :
- Surface Mount
- Product :
- MOSFET Small Signal
- Brand :
- Microchip Technology
- Rds On (Max) @ Id, Vgs :
- 30 Ω @ 100mA, 10V
- Operating Mode :
- ENHANCEMENT MODE
- Power Dissipation (Max) :
- 1.6W (Ta)
- Terminal Position :
- Single
- Height :
- 1.6mm
- Channel Type :
- P
- JEDEC-95 Code :
- TO-243AA
- Pulsed Drain Current-Max (IDM) :
- 0.8A
- MSL :
- MSL 1 - Unlimited
- Drain to Source Voltage (Vdss) :
- 500V
- Power Dissipation :
- 1.6W
- RoHS :
- Details
- Terminal Finish :
- Matte Tin (Sn)
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Transistor Polarity :
- P-Channel
- Supplier Device Package :
- TO-243AA (SOT-89)
- ECCN Code :
- EAR99
- Fall Time (Typ) :
- 25 ns
- Vgs(th) (Max) @ Id :
- 3.5V @ 1mA
- Package / Case :
- TO-243AA
- Mount :
- Surface Mount
- Weight :
- 52.786812mg
- Continuous Drain Current (ID) :
- 160mA
- Package :
- Tape and Reel (TR);Cut Tape (CT);Digi-Reel®;
- Transistor Element Material :
- SILICON
- Peak Reflow Temperature (Cel) :
- 260
- Vgs (Max) :
- ±20V
- Number of Channels :
- 1
- Turn-Off Delay Time :
- 45 ns
- Package Shape :
- RECTANGULAR
- Type :
- FET
- Polarity/Channel Type :
- P-Channel
- Packaging :
- Tape and Reel (TR)
- Qualification Status :
- Not Qualified
- Transistor Type :
- 1 P-Channel
- Pin Count :
- 3
- Channel Mode :
- Enhancement
- Drain to Source Breakdown Voltage :
- -500V
- Number of Elements :
- 1
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Rise Time :
- 25ns
- Input Capacitance (Ciss) (Max) @ Vds :
- 190pF @ 25V
- Surface Mount :
- yes
- Number of Terminations :
- 3
- Continuous Drain Current Id :
- 160
- DS Breakdown Voltage-Min :
- 500 V
- Subcategory :
- MOSFETs
- Package Type :
- SOT-89
- Radiation Hardening :
- No
- Configuration :
- Single
- Maximum Operating Temperature :
- +150 °C
- Product Type :
- MOSFET
- Product Category :
- MOSFET
- Product Status :
- Active
- Series :
- --
- Published :
- 2007
- Gate to Source Voltage (Vgs) :
- 20V
- Number of Pins :
- 4
- Transistor Application :
- SWITCHING
- Number of Terminals :
- 3
- Terminal Form :
- Flat
- Number of Elements per Chip :
- 1
- Reach Compliance Code :
- Compliant
- Drive Voltage (Max Rds On,Min Rds On) :
- 4.5V 10V
- Drain-source On Resistance-Max :
- 30 Ω
- Operating Temperature :
- -55°C~150°C TJ
- FET Type :
- P-Channel
- Time@Peak Reflow Temperature-Max (s) :
- 40
- RoHS Status :
- ROHS3 Compliant
- Length :
- 4.6mm
- Current - Continuous Drain (Id) @ 25°C :
- 160mA Tj
- Turn On Delay Time :
- 10 ns
- JESD-609 Code :
- e3
- JESD-30 Code :
- R-PSSO-F3
- Manufacturer :
- Microchip
- FET Feature :
- --
- Power Dissipation-Max :
- 1.6W Ta
- Mounting Style :
- SMD/SMT
- Minimum Operating Temperature :
- -55 °C
- Factory Lead Time :
- 6 Weeks
- Qualification :
- -
- Element Configuration :
- Single
- Case Connection :
- DRAIN
- Base Product Number :
- VP2450
- Width :
- 2.6mm
- Datasheets
- VP2450N8-G

P-Channel Tape & Reel (TR) 30 Ω @ 100mA, 10V ±20V 190pF @ 25V 500V TO-243AA
VP2450N8-G Overview
Input capacitance, CI, is defined as the capacitance between two input terminals of an op amp with one input grounded, and the input capacitance of this device is 190pF @ 25V.This device has a continuous drain current (ID) of [160mA], which is its maximum continuous current.At a given drain-source breakdown voltage, a specified value of ID will flow. With VGS=-500V, the drain-source breakdown voltage is -500V.The turn-off delay time of a device is the time it takes to charge its input capacitance before drain current can flow. The turn-off delay time of a device is 45 ns.A maximum pulsed drain current of 0.8A is the maximum peak drain current rated for this device.During turn-on, the input capacitance of the device is charged before drain current conduction starts, so its delay time is 10 ns.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 20V volts.In order to maintain normal operation, it is recommended to keep the DS breakdown voltage above 500 V.In order to operate this transistor, a voltage of 500V is needed from the drain to the source (Vdss).Its overall power consumption can be reduced by using drive voltage (4.5V 10V).
VP2450N8-G Features
a continuous drain current (ID) of 160mA
a drain-to-source breakdown voltage of -500V voltage
the turn-off delay time is 45 ns
based on its rated peak drain current 0.8A.
a 500V drain to source voltage (Vdss)
VP2450N8-G Applications
There are a lot of Microchip Technology
VP2450N8-G applications of single MOSFETs transistors.
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
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