VP0550N3-G

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Mfr.Part #
VP0550N3-G
Manufacturer
Microchip Technology
Package / Case
TO-226-3, TO-92-3 (TO-226AA)
Datasheet
Download
Description
MOSFET P-CH 500V 54MA TO92-3
Stock
934
In Stock :
934

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Manufacturer :
Microchip Technology
Product Category :
Transistors - FETs, MOSFETs - Single
Channel Type :
P
Operating Temp Range :
-55C to 150C
Terminal Position :
BOTTOM
JEDEC-95 Code :
TO-92
Drain to Source Breakdown Voltage :
-500V
Operating Temperature :
-55°C~150°C TJ
Rise Time :
8ns
Product Category :
MOSFET
Qualification Status :
Not Qualified
Rad Hardened :
No
Series :
-
Turn On Delay Time :
10 ns
Polarity/Channel Type :
P-Channel
Drain-source On Resistance-Max :
125 Ω
Continuous Drain Current :
0.054(A)
Surface Mount :
No
Continuous Drain Current (ID) :
-54mA
Mounting Type :
Through Hole
Terminal Finish :
Matte Tin (Sn)
Turn-Off Delay Time :
10 ns
Feedback Cap-Max (Crss) :
10 pF
Current - Continuous Drain (Id) @ 25°C :
54mA Tj
Vgs (Max) :
±20V
Vgs(th) (Max) @ Id :
4.5V @ 1mA
DS Breakdown Voltage-Min :
500 V
RoHS :
Details
Maximum Operating Temperature :
+ 150 C
Power Dissipation (Max) :
1W (Tc)
Polarity :
P
Packaging :
Bulk
Reach Compliance Code :
Compliant
Gate-Source Voltage (Max) :
±20(V)
Gate to Source Voltage (Vgs) :
20V
Package :
Bag
Input Capacitance (Ciss) (Max) @ Vds :
70pF @ 25V
Drain Current-Max (Abs) (ID) :
0.054A
Configuration :
Single
Mounting Style :
Through Hole
Factory Lead Time :
16 Weeks
JESD-609 Code :
e3
Drain-Source On-Volt :
500(V)
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Drain to Source Voltage (Vdss) :
500V
Package / Case :
TO-226-3, TO-92-3 (TO-226AA)
FET Feature :
-
Product Status :
Active
Power Dissipation-Max :
1W Tc
Transistor Polarity :
P-Channel
Type :
Power MOSFET
Pin Count :
3
Rds On (Max) @ Id, Vgs :
125 Ω @ 10mA, 10V
Number of Elements :
1
Number of Channels :
1
Transistor Type :
1 P-Channel
Power Dissipation :
1W
Base Product Number :
VP0550
Brand :
Microchip Technology / Atmel
Mounting :
Through Hole
Package Type :
TO-92
Operating Temperature Classification :
Military
Time@Peak Reflow Temperature-Max (s) :
Not Applicable
Operating Mode :
ENHANCEMENT MODE
Channel Mode :
Enhancement
JESD-30 Code :
O-PBCY-T3
Peak Reflow Temperature (Cel) :
Not Applicable
Product Type :
MOSFET
Package Shape :
Round
FET Technology :
METAL-OXIDE SEMICONDUCTOR
Manufacturer :
Microchip
Number of Terminals :
3
Minimum Operating Temperature :
- 55 C
Subcategory :
MOSFETs
Terminal Form :
THROUGH-HOLE
Transistor Application :
SWITCHING
Weight :
453.59237mg
Mount :
Through Hole
FET Type :
P-Channel
Transistor Element Material :
SILICON
Height :
5.33mm
Number of Pins :
3
Element Configuration :
Single
Number of Terminations :
3
Width :
4.19mm
Published :
2013
Contact Plating :
Tin
Fall Time (Typ) :
5 ns
Continuous Drain Current Id :
54
ECCN Code :
EAR99
Length :
5.21mm
Drive Voltage (Max Rds On,Min Rds On) :
5V 10V
RoHS Status :
ROHS3 Compliant
Supplier Device Package :
TO-92-3
Datasheets
VP0550N3-G
Introducing Transistors - FETs, MOSFETs - Single Microchip Technology VP0550N3-G from Chip IC,where excellence meets affordability. This product stands out with its Operating Temperature:-55°C~150°C TJ, Mounting Type:Through Hole, Package / Case:TO-226-3, TO-92-3 (TO-226AA), Type:Power MOSFET, Number of Channels:1, Number of Pins:3, Number of Terminations:3, VP0550N3-G pinout, VP0550N3-G datasheet PDF, VP0550N3-G amp .Beyond Transistors - FETs, MOSFETs - Single Microchip Technology VP0550N3-G ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Microchip Technology VP0550N3-G


P-Channel Bulk 125 Ω @ 10mA, 10V ±20V 70pF @ 25V 500V TO-226-3, TO-92-3 (TO-226AA)

VP0550N3-G Overview


CI refers to the capacitance between two input terminals on an op amp with either input grounded, and this device's maximum input capacitance is 70pF @ 25V.In this device, the drain current (ID) is equal to the continuous current transistor can conduct.This device has -500V drain-to-source breakdown voltage, where VDS corresponds to the ID at which a specified value of ID flows and VGS equals -500V.There is no drain current on this device since the maximum continuous current it can conduct is 0.054A.As a result of its turn-off delay time, which is 10 ns, the device has taken time to charge its input capacitance before drain current conduction begins.Input capacitance charge delays drain current conduction until the time it takes to charge input capacitance reaches 10 ns.Gate-source voltages (VGS) are voltages that fall across the gate-source terminal of FET transistors. VGS is sometimes 20VV.In order for DS breakdown voltage to remain above 500 V, it should remain above the 500 V level.The transistor must receive a 500V drain to source voltage (Vdss) in order to function.In addition to reducing power consumption, this device uses drive voltage (5V 10V).

VP0550N3-G Features


a continuous drain current (ID) of -54mA
a drain-to-source breakdown voltage of -500V voltage
the turn-off delay time is 10 ns
a 500V drain to source voltage (Vdss)


VP0550N3-G Applications


There are a lot of Microchip Technology
VP0550N3-G applications of single MOSFETs transistors.


  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
  • PFC stages, hard switching PWM stages and resonant switching
  • PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
  • Lighting, Server, Telecom and UPS.
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