VP0550N3-G
- Mfr.Part #
- VP0550N3-G
- Manufacturer
- Microchip Technology
- Package / Case
- TO-226-3, TO-92-3 (TO-226AA)
- Datasheet
- Download
- Description
- MOSFET P-CH 500V 54MA TO92-3
- Stock
- 934
- In Stock :
- 934
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- Manufacturer :
- Microchip Technology
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Channel Type :
- P
- Operating Temp Range :
- -55C to 150C
- Terminal Position :
- BOTTOM
- JEDEC-95 Code :
- TO-92
- Drain to Source Breakdown Voltage :
- -500V
- Operating Temperature :
- -55°C~150°C TJ
- Rise Time :
- 8ns
- Product Category :
- MOSFET
- Qualification Status :
- Not Qualified
- Rad Hardened :
- No
- Series :
- -
- Turn On Delay Time :
- 10 ns
- Polarity/Channel Type :
- P-Channel
- Drain-source On Resistance-Max :
- 125 Ω
- Continuous Drain Current :
- 0.054(A)
- Surface Mount :
- No
- Continuous Drain Current (ID) :
- -54mA
- Mounting Type :
- Through Hole
- Terminal Finish :
- Matte Tin (Sn)
- Turn-Off Delay Time :
- 10 ns
- Feedback Cap-Max (Crss) :
- 10 pF
- Current - Continuous Drain (Id) @ 25°C :
- 54mA Tj
- Vgs (Max) :
- ±20V
- Vgs(th) (Max) @ Id :
- 4.5V @ 1mA
- DS Breakdown Voltage-Min :
- 500 V
- RoHS :
- Details
- Maximum Operating Temperature :
- + 150 C
- Power Dissipation (Max) :
- 1W (Tc)
- Polarity :
- P
- Packaging :
- Bulk
- Reach Compliance Code :
- Compliant
- Gate-Source Voltage (Max) :
- ±20(V)
- Gate to Source Voltage (Vgs) :
- 20V
- Package :
- Bag
- Input Capacitance (Ciss) (Max) @ Vds :
- 70pF @ 25V
- Drain Current-Max (Abs) (ID) :
- 0.054A
- Configuration :
- Single
- Mounting Style :
- Through Hole
- Factory Lead Time :
- 16 Weeks
- JESD-609 Code :
- e3
- Drain-Source On-Volt :
- 500(V)
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Drain to Source Voltage (Vdss) :
- 500V
- Package / Case :
- TO-226-3, TO-92-3 (TO-226AA)
- FET Feature :
- -
- Product Status :
- Active
- Power Dissipation-Max :
- 1W Tc
- Transistor Polarity :
- P-Channel
- Type :
- Power MOSFET
- Pin Count :
- 3
- Rds On (Max) @ Id, Vgs :
- 125 Ω @ 10mA, 10V
- Number of Elements :
- 1
- Number of Channels :
- 1
- Transistor Type :
- 1 P-Channel
- Power Dissipation :
- 1W
- Base Product Number :
- VP0550
- Brand :
- Microchip Technology / Atmel
- Mounting :
- Through Hole
- Package Type :
- TO-92
- Operating Temperature Classification :
- Military
- Time@Peak Reflow Temperature-Max (s) :
- Not Applicable
- Operating Mode :
- ENHANCEMENT MODE
- Channel Mode :
- Enhancement
- JESD-30 Code :
- O-PBCY-T3
- Peak Reflow Temperature (Cel) :
- Not Applicable
- Product Type :
- MOSFET
- Package Shape :
- Round
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Manufacturer :
- Microchip
- Number of Terminals :
- 3
- Minimum Operating Temperature :
- - 55 C
- Subcategory :
- MOSFETs
- Terminal Form :
- THROUGH-HOLE
- Transistor Application :
- SWITCHING
- Weight :
- 453.59237mg
- Mount :
- Through Hole
- FET Type :
- P-Channel
- Transistor Element Material :
- SILICON
- Height :
- 5.33mm
- Number of Pins :
- 3
- Element Configuration :
- Single
- Number of Terminations :
- 3
- Width :
- 4.19mm
- Published :
- 2013
- Contact Plating :
- Tin
- Fall Time (Typ) :
- 5 ns
- Continuous Drain Current Id :
- 54
- ECCN Code :
- EAR99
- Length :
- 5.21mm
- Drive Voltage (Max Rds On,Min Rds On) :
- 5V 10V
- RoHS Status :
- ROHS3 Compliant
- Supplier Device Package :
- TO-92-3
- Datasheets
- VP0550N3-G
,TO-226_straightlead.jpg)
P-Channel Bulk 125 Ω @ 10mA, 10V ±20V 70pF @ 25V 500V TO-226-3, TO-92-3 (TO-226AA)
VP0550N3-G Overview
CI refers to the capacitance between two input terminals on an op amp with either input grounded, and this device's maximum input capacitance is 70pF @ 25V.In this device, the drain current (ID) is equal to the continuous current transistor can conduct.This device has -500V drain-to-source breakdown voltage, where VDS corresponds to the ID at which a specified value of ID flows and VGS equals -500V.There is no drain current on this device since the maximum continuous current it can conduct is 0.054A.As a result of its turn-off delay time, which is 10 ns, the device has taken time to charge its input capacitance before drain current conduction begins.Input capacitance charge delays drain current conduction until the time it takes to charge input capacitance reaches 10 ns.Gate-source voltages (VGS) are voltages that fall across the gate-source terminal of FET transistors. VGS is sometimes 20VV.In order for DS breakdown voltage to remain above 500 V, it should remain above the 500 V level.The transistor must receive a 500V drain to source voltage (Vdss) in order to function.In addition to reducing power consumption, this device uses drive voltage (5V 10V).
VP0550N3-G Features
a continuous drain current (ID) of -54mA
a drain-to-source breakdown voltage of -500V voltage
the turn-off delay time is 10 ns
a 500V drain to source voltage (Vdss)
VP0550N3-G Applications
There are a lot of Microchip Technology
VP0550N3-G applications of single MOSFETs transistors.
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
- Lighting, Server, Telecom and UPS.
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