VN2222LL

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Configuration :

Single

Transistor Type :

1 N-Channel

Supplier Device Package :

TO-92-3

Package / Case :

TO-226-3, TO-92-3 (TO-226AA)

Package Type :

TO-92

Turn-Off Delay Time :

10 ns

Drain Current-Max (Abs) (ID) :

0.099A

Channel Mode :

Enhancement

Maximum Operating Temperature :

+150 °C

Number of Elements :

1

Turn On Delay Time :

10 ns

Terminal Finish :

Matte Tin (Sn)

Rad Hardened :

No

JESD-609 Code :

e3

Base Product Number :

VN2222

Number of Channels :

1

Package :

Bag

Current - Continuous Drain (Id) @ 25°C :

230mA Tj

FET Feature :

-

Number of Elements per Chip :

1

Width :

4.19mm

Gate-Source Voltage (Max) :

±30(V)

Number of Pins :

3

Packaging :

Bulk

Height :

5.33mm

Drain-Source On-Volt :

60(V)

Rds On (Max) @ Id, Vgs :

7.5 Ω @ 500mA, 10V

Weight :

453.59237mg

Product Category :

MOSFET

Power Dissipation :

1W

Gate to Source Voltage (Vgs) :

30V

Continuous Drain Current Id :

230mA

Operating Temperature Classification :

Military

Product Type :

MOSFET

ECCN Code :

EAR99

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Peak Reflow Temperature (Cel) :

Not Applicable

Mounting Type :

Through Hole

JEDEC-95 Code :

TO-92

DS Breakdown Voltage-Min :

60 V

Operating Mode :

ENHANCEMENT MODE

Mounting Style :

Through Hole

Feedback Cap-Max (Crss) :

8 pF

Mount :

Through Hole

RoHS :

Details

Transistor Element Material :

SILICON

RoHS Status :

ROHS3 Compliant

Lead Free :

Lead Free

MSL :

-

Mounting :

Through Hole

Manufacturer :

Microchip

Vgs(th) (Max) @ Id :

2.5V @ 1mA

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Polarity/Channel Type :

N-Channel

Drive Voltage (Max Rds On,Min Rds On) :

5V 10V

Power Dissipation (Max) :

400mW (Ta), 1W (Tc)

Continuous Drain Current (ID) :

230mA

Additional Feature :

LOW THRESHOLD

Factory Lead Time :

6 Weeks

Radiation Hardening :

No

Drain to Source Breakdown Voltage :

60V

Operating Temperature :

-55°C~150°C TJ

Number of Terminations :

3

Published :

2006

Input Capacitance (Ciss) (Max) @ Vds :

60pF @ 25V

Channel Type :

N Channel

Polarity :

N

Surface Mount :

No

Terminal Form :

THROUGH-HOLE

Transistor Polarity :

N-Channel

Transistor Application :

SWITCHING

Reach Compliance Code :

Compliant

Drain-source On Resistance-Max :

7.5 Ω

Qualification :

-

Element Configuration :

Single

Contact Plating :

Tin

Operating Temp Range :

-55C to 150C

Power Dissipation-Max :

400mW Ta 1W Tc

Series :

-

Drain to Source Voltage (Vdss) :

60 V

Continuous Drain Current :

0.23(A)

Terminal Position :

BOTTOM

Type :

Power MOSFET

Pin Count :

3

Product Status :

Active

FET Type :

N-Channel

Package Shape :

Round

Brand :

Microchip Technology / Atmel

Qualification Status :

Not Qualified

Number of Terminals :

3

Length :

5.21mm

JESD-30 Code :

O-PBCY-T3

Minimum Operating Temperature :

-55 °C

Power Dissipation-Max (Abs) :

0.4 W

Vgs (Max) :

±30V