VN1206L-G

Manufacturer :

Microchip Technology

Product Category :

Transistors - FETs, MOSFETs - Single

Qualification :

-

Drain to Source Voltage (Vdss) :

120 V

Maximum Operating Temperature :

+ 150 C

Fall Time (Typ) :

12 ns

Rise Time :

8ns

Operating Mode :

ENHANCEMENT MODE

Operating Temp Range :

-55C to 150C

Turn On Delay Time :

8 ns

Number of Terminations :

3

Height :

5.33mm

Packaging :

Bulk

Terminal Finish :

Matte Tin (Sn)

JEDEC-95 Code :

TO-92

Factory Lead Time :

6 Weeks

Package Shape :

Round

JESD-30 Code :

O-PBCY-T3

Terminal Position :

BOTTOM

Surface Mount :

No

Subcategory :

MOSFETs

Number of Terminals :

3

Pin Count :

3

Input Capacitance (Ciss) (Max) @ Vds :

125pF @ 25V

Manufacturer :

Microchip

Continuous Drain Current (ID) :

230mA

Package :

Bag

Vgs (Max) :

±30V

Transistor Type :

1 N-Channel

Configuration :

Single

Product Type :

MOSFET

Mounting Style :

Through Hole

Rad Hardened :

No

Rds On (Max) @ Id, Vgs :

6 Ω @ 500mA, 10V

Terminal Form :

THROUGH-HOLE

RoHS :

Details

JESD-609 Code :

e3

DS Breakdown Voltage-Min :

120 V

Mounting :

Through Hole

FET Feature :

-

Number of Elements :

1

Minimum Operating Temperature :

- 55 C

Drive Voltage (Max Rds On,Min Rds On) :

2.5V 10V

Power Dissipation :

1W

Mount :

Through Hole

Number of Channels :

1

Operating Temperature :

-55°C~150°C TJ

Continuous Drain Current :

0.23(A)

Polarity :

N

ECCN Code :

EAR99

Mounting Type :

Through Hole

Reach Compliance Code :

Compliant

Peak Reflow Temperature (Cel) :

Not Applicable

Product Category :

MOSFET

Continuous Drain Current Id :

230

Time@Peak Reflow Temperature-Max (s) :

Not Applicable

Series :

-

Package / Case :

TO-226-3, TO-92-3 (TO-226AA)

Element Configuration :

Single

Additional Feature :

LOW THRESHOLD

Qualification Status :

Not Qualified

FET Type :

N-Channel

Power Dissipation (Max) :

1W (Tc)

Channel Type :

N Channel

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Power Dissipation-Max :

1W Tc

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Transistor Polarity :

N-Channel

Transistor Element Material :

SILICON

Operating Temperature Classification :

Military

Drain-Source On-Volt :

120(V)

Width :

4.19mm

Weight :

453.59237mg

Length :

5.21mm

Published :

2013

Package Type :

TO-92

Number of Pins :

3

Base Product Number :

VN1206

Gate-Source Voltage (Max) :

±30(V)

Gate to Source Voltage (Vgs) :

30V

Drain-source On Resistance-Max :

6Ohm

Polarity/Channel Type :

N-Channel

RoHS Status :

ROHS3 Compliant

Turn-Off Delay Time :

18 ns

Vgs(th) (Max) @ Id :

2V @ 1mA

Feedback Cap-Max (Crss) :

20 pF

Current - Continuous Drain (Id) @ 25°C :

230mA Tj

Type :

Power MOSFET

Product Status :

Active

Transistor Application :

SWITCHING

Channel Mode :

Enhancement

Drain to Source Breakdown Voltage :

120V

Supplier Device Package :

TO-92-3

Brand :

Microchip Technology / Atmel