VN0550N3-G

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Mfr.Part #
VN0550N3-G
Manufacturer
Microchip Technology
Package / Case
TO-226-3, TO-92-3 (TO-226AA)
Datasheet
Download
Description
MOSFET N-CH 500V 50MA TO92-3
Stock
8,307
In Stock :
8,307

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Manufacturer :
Microchip Technology
Product Category :
Transistors - FETs, MOSFETs - Single
Mounting Style :
Through Hole
Rds On (Max) @ Id, Vgs :
60 Ω @ 50mA, 10V
Operating Mode :
ENHANCEMENT MODE
Product Type :
MOSFET
Vgs(th) (Max) @ Id :
4V @ 1mA
Number of Terminals :
3
Polarity/Channel Type :
N-Channel
Transistor Element Material :
SILICON
Package Type :
TO-92
Subcategory :
MOSFETs
Mounting Type :
Through Hole
Rise Time :
15ns
Radiation Hardening :
No
Rad Hardened :
No
Published :
2013
Product Category :
MOSFET
Product Status :
Active
DS Breakdown Voltage-Min :
500 V
Package :
Bag
Number of Pins :
3
Power Dissipation-Max :
1W Tc
Reach Compliance Code :
Compliant
Weight :
453.59237mg
FET Type :
N-Channel
Input Capacitance (Ciss) (Max) @ Vds :
55pF @ 25V
Drive Voltage (Max Rds On,Min Rds On) :
5V 10V
Continuous Drain Current (ID) :
50mA
Transistor Polarity :
N-Channel
Power Dissipation (Max) :
1W (Tc)
Operating Temperature :
-55°C~150°C TJ
Qualification Status :
Not Qualified
Drain to Source Breakdown Voltage :
500V
Type :
Power MOSFET
Series :
--
Transistor Application :
SWITCHING
RoHS :
Details
Mount :
Through Hole
Terminal Form :
Wire
FET Feature :
--
Brand :
Microchip Technology
Channel Mode :
Enhancement
JESD-30 Code :
O-PBCY-W3
Manufacturer :
Microchip
Drain-source On Resistance-Max :
60 Ω
Additional Feature :
LOW THRESHOLD
Turn On Delay Time :
10 ns
Drain to Source Voltage (Vdss) :
500V
Operating Temperature Classification :
Military
JEDEC-95 Code :
TO-92
Peak Reflow Temperature (Cel) :
Not Applicable
Maximum Operating Temperature :
+ 150 C
Minimum Operating Temperature :
- 55 C
Drain-Source On-Volt :
500(V)
Vgs (Max) :
±20V
Fall Time (Typ) :
10 ns
Number of Terminations :
3
Supplier Device Package :
TO-92-3
ECCN Code :
EAR99
Current - Continuous Drain (Id) @ 25°C :
50mA Tj
JESD-609 Code :
e3
Gate to Source Voltage (Vgs) :
20V
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Number of Elements :
1
Drain Current-Max (Abs) (ID) :
0.05A
Transistor Type :
1 N-Channel
Length :
5.21mm
Packaging :
Bulk
Continuous Drain Current Id :
50
Configuration :
Single
Power Dissipation :
1W
Factory Lead Time :
5 Weeks
Polarity :
N
Terminal Position :
BOTTOM
Operating Temp Range :
-55C to 150C
Base Product Number :
VN0550
Channel Type :
N
Number of Channels :
1
Height :
5.33mm
Feedback Cap-Max (Crss) :
5 pF
RoHS Status :
ROHS3 Compliant
Package Shape :
Round
Width :
4.19mm
Gate-Source Voltage (Max) :
±20(V)
Mounting :
Through Hole
Turn-Off Delay Time :
10 ns
Continuous Drain Current :
0.05(A)
Pin Count :
3
Element Configuration :
Single
Terminal Finish :
Matte Tin (Sn)
Package / Case :
TO-226-3, TO-92-3 (TO-226AA)
Surface Mount :
No
FET Technology :
METAL-OXIDE SEMICONDUCTOR
Datasheets
VN0550N3-G
Introducing Transistors - FETs, MOSFETs - Single Microchip Technology VN0550N3-G from Chip IC,where excellence meets affordability. This product stands out with its Mounting Type:Through Hole, Number of Pins:3, Operating Temperature:-55°C~150°C TJ, Type:Power MOSFET, Number of Terminations:3, Number of Channels:1, Package / Case:TO-226-3, TO-92-3 (TO-226AA), VN0550N3-G pinout, VN0550N3-G datasheet PDF, VN0550N3-G amp .Beyond Transistors - FETs, MOSFETs - Single Microchip Technology VN0550N3-G ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Microchip Technology VN0550N3-G


N-Channel Bulk 60 Ω @ 50mA, 10V ±20V 55pF @ 25V 500V TO-226-3, TO-92-3 (TO-226AA)

VN0550N3-G Overview


The input capacitance parameter, CI, is defined as the capacitance between the input terminals of an op amp with either input grounded, and this device's maximal input capacitance is 55pF @ 25V.The drain current is the maximum continuous current the device can conduct, and the continuous drain current (ID) of this device is 50mA. Drain-source breakdown voltage is the VDS at which a specified value of ID flows, with VGS=500V. And this device has 500V drain to source breakdown voltage.The drain current is the maximum continuous current the device can conduct, and the drain current of this device is 0.05A.Turn-Off delay time is the time taken to charge the input capacitance of the device before drain current conduction can start, and its turn-off delay time is 10 ns.Turn-on delay time is the time taken to charge the input capacitance of the device before drain current conduction can start, and its delay time is 10 ns.The gate-source voltage, VGS, of a FET transistor is the voltage that falls across the gate-source terminal of the transistor and its voltage can be 20V.Single MOSFETs transistor is recommended that the DS breakdown voltage be kept above 500 V in order to maintain normal operation.Operating this transistor requires a 500V drain to source voltage (Vdss).By using drive voltage (5V 10V), this device helps reduce its overall power consumption.

VN0550N3-G Features


a continuous drain current (ID) of 50mA
a drain-to-source breakdown voltage of 500V voltage
the turn-off delay time is 10 ns
a 500V drain to source voltage (Vdss)


VN0550N3-G Applications


There are a lot of Microchip Technology
VN0550N3-G applications of single MOSFETs transistors.


  • LCD/LED TV
  • Consumer Appliances
  • Lighting
  • Uninterruptible Power Supply
  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
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