VMO650-01F

Manufacturer :

Littelfuse

Product Category :

Transistors - FETs, MOSFETs - Single

Fall Time (Typ) :

200 ns

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Package Shape :

RECTANGULAR

Input Capacitance (Ciss) (Max) @ Vds :

59000pF @ 25V

Number of Terminals :

4

Polarity/Channel Type :

N-Channel

Series :

HiPerFET™

DS Breakdown Voltage-Min :

100 V

Operating Temperature :

-40°C~150°C TJ

Voltage - Rated DC :

100V

Rds On (Max) @ Id, Vgs :

1.8m Ω @ 500mA, 10V

Pulsed Drain Current-Max (IDM) :

2780A

Number of Terminations :

4

Number of Pins :

4

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Vgs (Max) :

±20V

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Drain-source On Resistance-Max :

0.0018Ohm

Power Dissipation-Max :

2500W Tc

Lead Free :

Lead Free

Drain Current-Max (Abs) (ID) :

690 A

Terminal Position :

UPPER

Package :

Bulk

Terminal Form :

UNSPECIFIED

Vgs(th) (Max) @ Id :

6V @ 130mA

RoHS Status :

ROHS3 Compliant

Reach Compliance Code :

Compliant

Packaging :

Bulk

Power Dissipation (Max) :

2500W (Tc)

Product Status :

Active

Base Product Number :

VMO650

Package / Case :

Y3-DCB

Power Dissipation-Max (Abs) :

2500 W

Mount :

Chassis Mount

FET Feature :

--

Power Dissipation :

2.5kW

Rise Time :

500ns

Factory Lead Time :

28 Weeks

Surface Mount :

No

Drive Voltage (Max Rds On,Min Rds On) :

10V

Gate Charge (Qg) (Max) @ Vgs :

2300nC @ 10V

Pbfree Code :

yes

Gate to Source Voltage (Vgs) :

20V

Turn-Off Delay Time :

800 ns

Current Rating :

690A

Continuous Drain Current (ID) :

690A

Manufacturer :

Littelfuse Inc

Mounting Type :

Chassis Mount

Drain to Source Voltage (Vdss) :

100V

Operating Mode :

ENHANCEMENT MODE

Current - Continuous Drain (Id) @ 25°C :

690A Tc

ECCN Code :

EAR99

Qualification Status :

Not Qualified

Case Connection :

Isolated

Number of Elements :

1

Supplier Device Package :

Y3-DCB

Base Part Number :

VMO

JESD-30 Code :

R-PUFM-X4

Drain to Source Breakdown Voltage :

100V

Transistor Element Material :

SILICON

Transistor Application :

SWITCHING

FET Type :

N-Channel

Configuration :

SINGLE WITH BUILT-IN DIODE

Published :

2000